Abstract: A method for reducing NOx emissions during operation of an internal combustion engine in commerce which, when burning hydrocarbon fuel as a primary fuel, in the absence of any secondary fuel, has a characteristic stoichiometric ration. The method includes the following: in the absence of electrolytic activity, providing and entraining a quenching species in a gaseous medium and then interacting the quenching species with constituents present during oxidation of the primary fuel in a combustion chamber of the engine.

Abstract: A method for reducing NOx emissions during operation of an internal combustion engine in commerce which, when burning hydrocarbon fuel as a primary fuel, in the absence of any secondary fuel, has a characteristic stoichiometric ration. The method includes the following: in the absence of electrolytic activity, providing and entraining a quenching species in a gaseous medium and then interacting the quenching species with constituents present during oxidation of the primary fuel in a combustion chamber of the engine.

Abstract: A method for reducing NOx emissions during operation of an internal combustion engine in commerce which, when burning hydrocarbon fuel as a primary fuel, in the absence of any secondary fuel, has a characteristic stoichiometric ratio. The method includes: in the absence of electrolytic activity, providing and entraining a quenching species in a gaseous medium; and then interacting the quenching species with constituents present during oxidation of the primary fuel in a combustion chamber of the engine.

Abstract: A method for making a transistor 20 that includes using a transition metal nitride layer 200 and/or a SOG layer 220 to protect the source/drain regions 60 from silicidation during the silicidation of the gate electrode 90. The SOG layer 210 is planarized to expose the transition metal nitride layer 200 or the gate electrode 93 before the gate silicidation process. If a transition metal nitride layer 200 is used, then it is removed from the top of the gate electrode 93 before the full silicidation of the gate electrode 90.

Abstract: A method for removing dielectric material 50 from a semiconductor wafer 20 that contains metal silicide 60 or 90. The method includes performing a selective etch 202 of the semiconductor wafer 20 using an organic semi-aqueous solvent-based etchant until the dielectric material 50 is substantially removed and then rinsing 204 the semiconductor wafer 20 including a surface, 63 or 93, of the metal silicide, 60 or 90 respectively, of the semiconductor wafer 20.

Abstract: The present invention is directed, in general, to a polishing pad comprising a polishing body. The polishing body comprises a thermoplastic foam substrate having a surface comprising concave cells. The thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene. The thermoplastic foam substrate has a hardness ranging from about 24 Shore A to about 100 Shore A. Other embodiments include a method for preparing the polishing pad, a polishing apparatus that includes the polishing pad, and a method of polishing a semiconductor substrate using the polishing pad.

Abstract: The present invention provides a method for predicting a performance characteristic of a chemical mechanical polishing (CMP) pad. The method comprises providing a CMP pad having a polishing surface and measuring a frictional property of the polishing surface. The method further includes estimating a performance characteristic of the CMP pad based on the frictional property. Other aspects of the present invention include a quality control system for monitoring chemical mechanical polishing pad performance.

Abstract: The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.

Abstract: The present invention provides in one embodiment, a polishing pad 100 for chemical mechanical polishing. The polishing pad comprises a polishing body 110. The polishing body comprises a thermoplastic foam substrate 115 having a surface 120 comprising concave cells 125. A polishing agent 130 coats an interior surface 135 of the concave cells. The polishing agent comprises an inorganic metal oxide that includes carbides or nitrides. Yet another embodiment of the present invention is a method for preparing a polishing pad 200.