Patents by Inventor Yaw Tsai

Yaw Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060199396
    Abstract: In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.
    Type: Application
    Filed: May 3, 2006
    Publication date: September 7, 2006
    Inventors: Yaw Tsai, Shih Chang, De Deng, Shih Wang
  • Publication number: 20050079688
    Abstract: The invention relates to a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors. The semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. Since the two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors, the method of the present invention can achieve a better result for both the NMOS and PMOS transistors.
    Type: Application
    Filed: October 8, 2003
    Publication date: April 14, 2005
    Inventors: Yaw Tsai, Shih Chang, De Deng, Shih Wang