Abstract: The present disclosure relates to a display device with an outer contour of a polygon. The display device includes: a display panel; a functional panel on a side of a light exiting surface of the display panel; a first circuit board electrically connected to the display panel and bent at a first edge of the polygon to a side of the display panel away from the light exiting surface of the display panel; and a second circuit board electrically connected to the functional panel and bent at a second edge of the polygon to the side of the display panel away from the light exiting surface of the display panel, wherein the first edge and the second edge are different edges, and an orthographic projection of the first circuit board on the light exiting surface of the display panel does not overlap with an orthographic projection of the second circuit board on the light exiting surface of the display panel.

Abstract: After a first network device traces a clock of a second network device, when the first network device cannot trace the clock of the second network device, the first network device modifies a parameter value corresponding to a synchronization source selection parameter of the first network device to a first parameter value, where the first parameter value is superior to a parameter value corresponding to a synchronization source selection parameter of the second network device.

Abstract: A ceramic material including Co0.5Ti0.5TaO4. The ceramic material is prepared as follows: 1) weighting and mixing raw powders of Co2O3, TiO2 and Ta2O5 proportioned according to the chemical formula of Co0.5Ti0.5TaO4, to yield a mixture; 2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120° C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100° C. for 3-5 h, to yield powders comprising a main crystalline phase of Co0.5Ti0.5TaO4; and 3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100° C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100° C. in air atmosphere for 4-6 h.

Abstract: A ceramic material including Co0.5Ti0.5TaO4. The ceramic material is prepared as follows: 1) weighting and mixing raw powders of Co2O3, TiO2 and Ta2O5 proportioned according to the chemical formula of Co0.5Ti0.5TaO4, to yield a mixture; 2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120° C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100° C. for 3-5 h, to yield powders comprising a main crystalline phase of Co0.5Ti0.5TaO4; and 3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100° C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100° C. in air atmosphere for 4-6 h.

Abstract: An embodiment of a NOR Flash device manufacturing method includes: providing a substrate having a first polycrystalline silicon layer disposed thereon; forming a first hard mask layer on the first polycrystalline silicon layer; etching the first hard mask layer to form a first opening, and cleaning a gas pipeline connected to an etching cavity before etching the first hard mask layer; forming a second hard mask layer on the first hard mask layer, and the second hard mask layer covers the bottom and side wall of the first opening; etching the second hard mask layer to form a second opening, the width of the second opening is smaller than the width of the first opening; etching the first polycrystalline silicon, forming a floating gate. The NOR Flash device manufacturing method improves the yield of the NOR Flash device.

Abstract: An embodiment of a NOR Flash device manufacturing method is disclosed, which includes: providing a substrate having a first polycrystalline silicon layer disposed thereon; forming a first hard mask layer on the first polycrystalline silicon layer; etching the first hard mask layer to form a first opening, and cleaning a gas pipeline connected to an etching cavity before etching the first hard mask layer; forming a second hard mask layer on the first hard mask layer, and the second hard mask layer covers the bottom and side wall of the first opening; etching the second hard mask layer to form a second opening, the width of the second opening is smaller than the width of the first opening; etching the first polycrystalline silicon, forming a floating gate. The NOR Flash device manufacturing method of the present invention improves the yield of the NOR Flash device.