Abstract: Provided are a perovskite material with stable bipolar molecules and a photoelectric device. The invention aims to provide the perovskite material with the stable bipolar molecules and the photoelectric device, which can indirectly enhance an interaction between metal cations and halogen anions, reduce a defect state density in the perovskite material, and inhibit ion migration in the perovskite material by utilizing bipolar groups in a bipolar molecule stabilizer. A component of the perovskite material with the stable bipolar molecules is D: A?2An?1BnX3n+1 or D: ABX3, wherein A? is an organic amine cation, A is a monovalent cation, B is a metal cation, X is a monovalent anion, and D is the bipolar molecule stabilizer. A thermal stability, a phase stability and a photoluminescence stability of the material are remarkably enhanced, and working stabilities and efficiencies of the perovskite material and the photoelectric device are remarkably improved.

Abstract: Disclosed are an external-cavity-free low-threshold perovskite laser device and an application thereof. A gain medium is a perovskite material or a combination of the perovskite material and other materials. An ingredient of the perovskite is A?2An?1BnX3n+1, or ABX3, A? is an organic amine cation, A is a monovalent cation, B is a metal cation, and X is an anion; and a preparation method of the gain medium comprises dissolving A? X, AX and BX in a solvent to obtain a precursor solution of perovskite or a nanocrystalline, and the gain medium is prepared by a solution method. Or, the A? X, the AX and the BX are prepared by non-solution methods such as evaporation, vapor deposition, magnetron sputtering and solid-state reaction. According to the laser device in the invention, a resonant cavity does not need to be additionally designed and machined, so that compactness and integration of the device are improved.

Abstract: An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.

Abstract: An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.

Abstract: A photon confinement theoretical model is proposed, and a solar cell structure model is designed based on the theoretical model, thereby providing a photonically-confined solar cell and optoelectronic device to effectively reduce the probability of photons escaping from the cell.