Abstract: The present application relates to the field of display technology and, in particular, to an array substrate, a manufacturing method of the array substrate, and a display device. An array substrate comprises: a base substrate having a pixel display area and a gate drive circuit area; a first thin film transistor formed in the pixel display area, the first thin film transistor comprising a first gate insulating layer; a second thin film transistor formed in the gate drive circuit area, the second thin film transistor comprising a second gate insulating layer, where a thickness of the second gate insulating layer is smaller than a thickness of the first gate insulating layer.

Abstract: A method of manufacturing an array substrate includes: providing a base; forming a plurality of conductive lines on the base; forming an oxide semiconductor film on a side of the plurality of conductive lines away from the base, the oxide semiconductor film covering the plurality of conductive lines and being in direct contact with at least one conductive line, and the at least one conductive line being configured to discharge static electricity generated in the oxide semiconductor film; and patterning the oxide semiconductor film by using a photoetching process to remove a portion of the oxide semiconductor film that is in direct contact with the at least one conductive line, and form an oxide semiconductor layer including active layers of a plurality of oxide thin film transistors, the oxide semiconductor layer and the at least one conductive line being insulated from each other.

Abstract: A preparation method for an array substrate, comprising: providing a substrate; forming multiple wires on the substrate; forming an oxide semiconductor thin film on the side of the multiple wires furthest from the substrate, the oxide semiconductor thin film covering the multiple wires and being in direct contact with at least one signal line, the at least one wire being configured to guide out the static electricity produced in the oxide semiconductor thin film; and, by using a photolithography process, performing patterning processing on the oxide semiconductor thin film to remove the part in direct contact with the at least one wire and form an oxide semiconductor layer comprising active layers of multiple oxide thin film transistors.

Abstract: The present application relates to the field of display technology and, in particular, to an array substrate, a manufacturing method of the array substrate, and a display device. An array substrate comprises: a base substrate having a pixel display area and a gate drive circuit area; a first thin film transistor formed in the pixel display area, the first thin film transistor comprising a first gate insulating layer; a second thin film transistor formed in the gate drive circuit area, the second thin film transistor comprising a second gate insulating layer, where a thickness of the second gate insulating layer is smaller than a thickness of the first gate insulating layer.

Abstract: A pixel defining structure includes a first pixel defining portion formed on a base substrate, the first pixel defining portion having a pixel opening, a bump pattern formed on the base substrate and located in the pixel opening, a gap being formed between the bump pattern and the first pixel defining portion, and a second pixel defining portion formed on a surface of the first pixel defining portion away from the base substrate.

Abstract: A method for transferring massive Micro-LED includes: providing a transfer plate including a base substrate, an insulation film on the base substrate and provided with recesses, and first metal bonding pads in the recesses; providing Micro-LED grains each provided with a second bonding metal at a backside of the Micro-LED gain; forming solder on the first metal bonding pad or the second metal bonding pad; placing the transfer plate and the Micro-LED gains into a chamber which contains solvent and has a temperature higher than a melting point of the solder, vibrating the chamber to enable the Micro-LED gains to fall into the recesses, thereby enabling the second metal bonding pads of the Micro-LED gains fallen in the recesses to be in contact with the first metal bonding pads in the recesses through the solder; and cooling down the transfer plate, thereby solidifying the solder and forming a Micro-LED substrate.