Abstract: Provided in the present invention is a flipping apparatus, comprising a bracket body, a rotary driver, and a clamping apparatus, a plurality of partition plates being formed on inner side surfaces of two side walls of the bracket body, a carrier slot for the placement of a wafer being formed between each two adjacent partition plates, and rotating shafts being formed on outer side surfaces of the two side walls of the bracket body. The rotary driver is connected to at least one rotating shaft to drive the bracket body to rotate, and the clamping apparatus is disposed on the side wall of the bracket body and is used for pressing or releasing the wafers placed in the carrier slots.

Abstract: Provided is a method for preparing islatravir, including: 1) subjecting compound of Formula II as a raw material to selective hydroxyl protection reaction to obtain compound of Formula III, 2) subjecting the compound of Formula III to hydroxyl oxidation reaction to obtain compound of Formula IV; 3) subjecting the compound of Formula IV and dimethyl diazomethylphosphonate to reaction under an alkaline condition to obtain compound of Formula V; 4) subjecting the compound of Formula V to protecting group conversion reaction to obtain compound of Formula VI; 5) subjecting the compound of Formula VI to glycosylation reaction to obtain compound of Formula VII; 6) subjecting the compound of Formula VII to selective deprotection reaction to obtain compound of Formula VIII; 7) subjecting the compound of Formula VIII to deoxidation reaction to obtain compound of Formula IX; and 8) subjecting the compound of Formula IX to debenzylation reaction to obtain the islatravir.

Abstract: The present disclosure provides a preparation method of a 2?-substituted pyrimidine nucleoside, including the following steps: subjecting a compound of Formula I or Formula II to a series of process including dehydration, selective 5?-protection, ring-opening reaction using magnesium alkoxide and deprotection to obtain a 2?-substituted pyrimidine nucleoside of Formula VII or Formula VIII. In the present disclosure, the preparation method has desirable universality for different substrates; the ring-opening with a protected anhydrous pyrimidine nucleoside improves a solubility of the substrate, with milder reaction conditions than those of a traditional synthetic route; the formation of a dimer is avoided during the ring-opening to improve the yield; in addition, an intermediate (5?-O-bis-p-methoxytrityl-protected 2?-substituted pyrimidine nucleoside) can be directly used in synthesis of a corresponding phosphoramidite monomer, with a wider potential for use.

Abstract: A method of preparing a thin film and a method of manufacturing a display device are disclosed. The method of preparing a thin film includes the following steps: providing a substrate having a film formation region and a non-film formation region surrounding the film formation region; forming a gas precursor repellent layer in the non-film formation region; and depositing a gas precursor on the film formation region by atomic deposition to form the film. The method of preparing a film and the method of manufacturing a display device of the present invention can effectively achieve the effect of limiting the boundary of the film by forming the gas precursor repellent layer in the non-film formation region, and finally eliminate the problem of boundary epitaxial caused by atomic deposition.

Abstract: A method of preparing a thin film and a method of manufacturing a display device are disclosed. The method of preparing a thin film includes the following steps: providing a substrate having a film formation region and a non-film formation region surrounding the film formation region; forming a gas precursor repellent layer in the non-film formation region; and depositing a gas precursor on the film formation region by atomic deposition to form the film. The method of preparing a film and the method of manufacturing a display device of the present invention can effectively achieve the effect of limiting the boundary of the film by forming the gas precursor repellent layer in the non-film formation region, and finally eliminate the problem of boundary epitaxial caused by atomic deposition.