Patents by Inventor Yazhou LI

Yazhou LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240150925
    Abstract: The present invention provides a single-crystal high-nickel positive electrode material and a preparation method therefor and an application thereof. The preparation method comprises the following steps: (1) mixing a precursor, a lithium source, and a nano oxide, and performing primary sintering treatment in an oxygen-containing atmosphere to obtain a primary sintered material; and (2) mixing the primary sintered material obtained in step (1) with a titanium source and a cobalt source, and performing secondary sintering treatment in an oxygen-containing atmosphere to obtain the single-crystal high-nickel positive electrode material. The present invention uses a Ti/Co co-coating method, the residual alkali amount of the prepared single-crystal high-nickel positive electrode material can be greatly reduced, and the capacity and the rate capability can also be kept at a high level, so that the technological process is reduced, and the cost is reduced.
    Type: Application
    Filed: November 12, 2021
    Publication date: May 9, 2024
    Applicant: SVolt Energy Technology Co., Ltd.
    Inventors: Jiali Ma, Shutao Zhang, Zitan Li, Zhuang Wang, Yazhou Wang, Yan Bai, Hailong Pan
  • Publication number: 20240140820
    Abstract: A composite material and a preparation method therefor and a lithium-ion battery positive electrode material. The preparation method for the composite material comprises the following steps: performing first calcination treatment on a mixture of a manganese source, a nickel source, a lithium source and a cobalt source to obtain cobalt-doped lithium nickel manganese oxide; and performing second calcination treatment on a mixture of the cobalt-doped lithium nickel manganese oxide and silicon dioxide.
    Type: Application
    Filed: August 31, 2022
    Publication date: May 2, 2024
    Inventors: Yazhou WANG, Shutao ZHANG, Zitan LI, Zhuang WANG, Jiali MA, Yan BAI
  • Publication number: 20240118157
    Abstract: An ambient pressure compensation structure for an ultraviolet difference spectrum gas sensor includes a closed box, an ultraviolet difference spectrum gas sensor, a digital pressure sensor, a thermostatic controller, an industrial control computer, a pressure regulating assembly and a limiting partition; the pressure regulating assembly and the limiting partition are arranged inside the closed box, the pressure regulating assembly comprises a piston, a regulating rod and a driving motor, the left side of the piston is connected with the regulating rod, the front end of the regulating rod penetrates out of the closed box and is connected with the driving motor, and the piston divides the interior of the closed box into a pressure regulating air chamber and a working air chamber. Also disclosed is an ambient pressure compensation method for an ultraviolet difference spectrum gas sensor.
    Type: Application
    Filed: December 19, 2023
    Publication date: April 11, 2024
    Inventors: Fuchao TIAN, Yuntao LIANG, Shuanglin SONG, Xing AI, Yazhou XU, Weiwei SU, Baolong GUO, Zhenrong LI
  • Publication number: 20230399354
    Abstract: The present disclosure provides a preparation method of a 2?-substituted pyrimidine nucleoside, including the following steps: subjecting a compound of Formula I or Formula II to a series of process including dehydration, selective 5?-protection, ring-opening reaction using magnesium alkoxide and deprotection to obtain a 2?-substituted pyrimidine nucleoside of Formula VII or Formula VIII. In the present disclosure, the preparation method has desirable universality for different substrates; the ring-opening with a protected anhydrous pyrimidine nucleoside improves a solubility of the substrate, with milder reaction conditions than those of a traditional synthetic route; the formation of a dimer is avoided during the ring-opening to improve the yield; in addition, an intermediate (5?-O-bis-p-methoxytrityl-protected 2?-substituted pyrimidine nucleoside) can be directly used in synthesis of a corresponding phosphoramidite monomer, with a wider potential for use.
    Type: Application
    Filed: September 16, 2022
    Publication date: December 14, 2023
    Applicant: BEIJING RIBIO PHARMA CO., LTD.
    Inventors: Yazhou LI, Yibiao LIU, Guanshen ZHOU, Zhenchang CHEN, Hongjuan ZHANG
  • Patent number: 11342502
    Abstract: A method of preparing a thin film and a method of manufacturing a display device are disclosed. The method of preparing a thin film includes the following steps: providing a substrate having a film formation region and a non-film formation region surrounding the film formation region; forming a gas precursor repellent layer in the non-film formation region; and depositing a gas precursor on the film formation region by atomic deposition to form the film. The method of preparing a film and the method of manufacturing a display device of the present invention can effectively achieve the effect of limiting the boundary of the film by forming the gas precursor repellent layer in the non-film formation region, and finally eliminate the problem of boundary epitaxial caused by atomic deposition.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: May 24, 2022
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Yazhou Li, Gaozhen Wang
  • Publication number: 20220045273
    Abstract: A method of preparing a thin film and a method of manufacturing a display device are disclosed. The method of preparing a thin film includes the following steps: providing a substrate having a film formation region and a non-film formation region surrounding the film formation region; forming a gas precursor repellent layer in the non-film formation region; and depositing a gas precursor on the film formation region by atomic deposition to form the film. The method of preparing a film and the method of manufacturing a display device of the present invention can effectively achieve the effect of limiting the boundary of the film by forming the gas precursor repellent layer in the non-film formation region, and finally eliminate the problem of boundary epitaxial caused by atomic deposition.
    Type: Application
    Filed: December 19, 2019
    Publication date: February 10, 2022
    Inventors: Yazhou LI, Gaozhen WANG