Patents by Inventor Ye Du
Ye Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240089542Abstract: The embodiments of the present disclosure provide a video content preview interactive method and apparatus, an electronic device, and a storage medium. A video-playing interface is displayed, a progress bar component is provided in the video-playing interface, and the progress bar component is used for displaying a playing progress of a target video played in the video-playing interface; a target caption corresponding to a target timestamp of the target video is displayed in response to a moving instruction for the progress bar component, where the moving operation indicates the target timestamp of the target video, and the target caption indicates video content of the target video at the target timestamp.Type: ApplicationFiled: September 8, 2023Publication date: March 14, 2024Inventors: Yidan TANG, Zhilin ZHANG, Siqi TAN, Yuzhang DU, Ye LIN
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Patent number: 11915761Abstract: In certain aspects, a memory device includes a memory string including a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor, and a peripheral circuit coupled to the memory string. The peripheral circuit is configured to in response to an interrupt during a program operation on a select memory cell of the plurality of memory cells, turn on at least one of the DSG transistor or the SSG transistor. The peripheral circuit is also configured to suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor.Type: GrantFiled: September 23, 2021Date of Patent: February 27, 2024Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Zhichao Du, Yu Wang, Haibo Li, Ke Jiang, Ye Tian
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Patent number: 9899044Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.Type: GrantFiled: July 28, 2015Date of Patent: February 20, 2018Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono, Ye Du
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MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE
Publication number: 20170221507Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.Type: ApplicationFiled: July 28, 2015Publication date: August 3, 2017Inventors: Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO, Ye DU -
Publication number: 20170092307Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: ApplicationFiled: October 31, 2016Publication date: March 30, 2017Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye DU, Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO
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Patent number: 9589583Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: GrantFiled: October 31, 2016Date of Patent: March 7, 2017Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye Du, Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono
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Patent number: 9558767Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: GrantFiled: April 2, 2014Date of Patent: January 31, 2017Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye Du, Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono
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Patent number: 9493821Abstract: A DNA library, and a preparing method thereof, a method of determining DNA sequence information, an apparatus and a kit for detecting SNPs, and a method for genotyping may be provided. The method for preparing the DNA library may comprise the steps of: digesting a genomic DNA sample using a restriction endonuclease to obtain a digested product, wherein the restriction endonuclease comprises at least one selected from the group consisting of Mbo II and Tsp 45I; separating the digested product to obtain DNA fragments having a length of 100 bp to 1,000 bp; end-repairing the DNA fragments to obtain an end-repaired DNA fragments; adding a base A to the end of the end-repaired DNA fragments to obtain DNA fragments having a terminal base A; and ligating the DNA fragments having the terminal base A with sequencing adaptors to obtain the DNA library.Type: GrantFiled: September 21, 2011Date of Patent: November 15, 2016Assignee: BGI TECH SOLUTIONS CO., LTD.Inventors: Ye Du, Meiru Zhao, Ying Chen, Jinghua Wu, Geng Tian, Jun Wang
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Publication number: 20160019917Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: ApplicationFiled: April 2, 2014Publication date: January 21, 2016Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye DU, Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO
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Publication number: 20130288907Abstract: A DNA library, and a preparing method thereof, a method of determining DNA sequence information, an apparatus and a kit for detecting SNPs, and a method for genotyping may be provided. The method for preparing the DNA library may comprise the steps of: digesting a genomic DNA sample using a restriction endonuclease to obtain a digested product, wherein the restriction endonuclease comprises at least one selected from the group consisting of Mbo II and Tsp 45I; separating the digested product to obtain DNA fragments having a length of 100 bp to 1,000 bp; end-repairing the DNA fragments to obtain an end-repaired DNA fragments; adding a base A to the end of the end-repaired DNA fragments to obtain DNA fragments having a terminal base A; and ligating the DNA fragments having the terminal base A with sequencing adaptors to obtain the DNA library.Type: ApplicationFiled: September 21, 2011Publication date: October 31, 2013Inventor: Ye Du