Patents by Inventor Ye Du
Ye Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250209634Abstract: The present disclosure relates to a coarse annotation based semantic segmentation model training method and device operating by sending an original image into a semantic segmentation model for processing; acquiring a semantic feature map output by a specified convolution layer in the semantic segmentation model; sending the semantic feature map to a first training branch for training to obtain a first cross entropy loss value, wherein the first training branch is a fully supervised branch depending on a ground-truth map; sending the semantic feature map to a second training branch for training to obtain a second cross entropy loss value, wherein the second training branch is an unsupervised branch without a ground-truth map; and determining an overall loss function according to the first cross entropy loss value and the second cross entropy loss value.Type: ApplicationFiled: April 22, 2022Publication date: June 26, 2025Inventors: Zehua Fu, Jingchao Liu, Ye Du, Qingjie Liu, Yunhong Wang
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Patent number: 9899044Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.Type: GrantFiled: July 28, 2015Date of Patent: February 20, 2018Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono, Ye Du
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MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE
Publication number: 20170221507Abstract: The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.Type: ApplicationFiled: July 28, 2015Publication date: August 3, 2017Inventors: Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO, Ye DU -
Publication number: 20170092307Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: ApplicationFiled: October 31, 2016Publication date: March 30, 2017Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye DU, Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO
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Patent number: 9589583Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: GrantFiled: October 31, 2016Date of Patent: March 7, 2017Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye Du, Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono
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Patent number: 9558767Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: GrantFiled: April 2, 2014Date of Patent: January 31, 2017Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye Du, Takao Furubayashi, Yukiko Takahashi, Kazuhiro Hono
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Patent number: 9493821Abstract: A DNA library, and a preparing method thereof, a method of determining DNA sequence information, an apparatus and a kit for detecting SNPs, and a method for genotyping may be provided. The method for preparing the DNA library may comprise the steps of: digesting a genomic DNA sample using a restriction endonuclease to obtain a digested product, wherein the restriction endonuclease comprises at least one selected from the group consisting of Mbo II and Tsp 45I; separating the digested product to obtain DNA fragments having a length of 100 bp to 1,000 bp; end-repairing the DNA fragments to obtain an end-repaired DNA fragments; adding a base A to the end of the end-repaired DNA fragments to obtain DNA fragments having a terminal base A; and ligating the DNA fragments having the terminal base A with sequencing adaptors to obtain the DNA library.Type: GrantFiled: September 21, 2011Date of Patent: November 15, 2016Assignee: BGI TECH SOLUTIONS CO., LTD.Inventors: Ye Du, Meiru Zhao, Ying Chen, Jinghua Wu, Geng Tian, Jun Wang
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Publication number: 20160019917Abstract: The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.Type: ApplicationFiled: April 2, 2014Publication date: January 21, 2016Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Ye DU, Takao FURUBAYASHI, Yukiko TAKAHASHI, Kazuhiro HONO
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Publication number: 20130288907Abstract: A DNA library, and a preparing method thereof, a method of determining DNA sequence information, an apparatus and a kit for detecting SNPs, and a method for genotyping may be provided. The method for preparing the DNA library may comprise the steps of: digesting a genomic DNA sample using a restriction endonuclease to obtain a digested product, wherein the restriction endonuclease comprises at least one selected from the group consisting of Mbo II and Tsp 45I; separating the digested product to obtain DNA fragments having a length of 100 bp to 1,000 bp; end-repairing the DNA fragments to obtain an end-repaired DNA fragments; adding a base A to the end of the end-repaired DNA fragments to obtain DNA fragments having a terminal base A; and ligating the DNA fragments having the terminal base A with sequencing adaptors to obtain the DNA library.Type: ApplicationFiled: September 21, 2011Publication date: October 31, 2013Inventor: Ye Du