Abstract: A MEMS microphone includes a substrate presenting a vibration area, a supporting area surrounding the vibration area and a peripheral area surrounding the supporting area, the substrate defining a cavity formed in the vibration area, a lower back plate being disposed over the substrate to cover the cavity and having a plurality of lower acoustic holes, a diaphragm being disposed over the lower back plate, the diaphragm being spaced apart from the lower back plate and configured to generate a displacement thereof in response to an applied acoustic pressure, an upper back plate being disposed over the diaphragm, the upper back plate being spaced apart from the diaphragm and having a plurality of upper acoustic holes, and an intermediate anchor being in contact with an upper surface of the lower back plate in the supporting area, the intermediate anchor being configured to support the diaphragm to space the diaphragm from the lower back plate, and to provide elasticity for the diaphragm.

Abstract: A MEMS microphone includes a substrate presenting a vibration area, a supporting area surrounding the vibration area and a peripheral area surrounding the supporting area, the substrate defining a cavity formed in the vibration area, a lower back plate being disposed over the substrate to cover the cavity and having a plurality of lower acoustic holes, a diaphragm being disposed over the lower back plate, the diaphragm being spaced apart from the lower back plate and configured to generate a displacement thereof in response to an applied acoustic pressure, an upper back plate being disposed over the diaphragm, the upper back plate being spaced apart from the diaphragm and having a plurality of upper acoustic holes, and an intermediate anchor being in contact with an upper surface of the lower back plate in the supporting area, the intermediate anchor being configured to support the diaphragm to space the diaphragm from the lower back plate, and to provide elasticity for the diaphragm.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm disposed between the substrate and the back plate, a first supporting member surrounding the diaphragm, the first supporting member including first dam portions arranged along a circumference of the diaphragm, and first slit portions between the first dam portion adjacent to each other to be configured to support the diaphragm from a lower face of the substrate, and a second supporting member surrounding the first supporting member, the second supporting member including second dam portions arranged along a circumference of the first dam portions, and second slit portions between the second dam portion adjacent to each other to be configured to further support the diaphragm from the lower face of the substrate. Thus, the MEMS microphone has an increased acoustic resistance.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm disposed between the substrate and the back plate, a first supporting member surrounding the diaphragm, the first supporting member including first dam portions arranged along a circumference of the diaphragm, and first slit portions between the first dam portion adjacent to each other to be configured to support the diaphragm from a lower face of the substrate, and a second supporting member surrounding the first supporting member, the second supporting member including second dam portions arranged along a circumference of the first dam portions, and second slit portions between the second dam portion adjacent to each other to be configured to further support the diaphragm from the lower face of the substrate. Thus, the MEMS microphone has an increased acoustic resistance.

Abstract: A semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode, a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas, and a vent hole formed by penetrating the second insulation layer to communicate with the exposure hole, and the vent hole being capable of dissipating heat from the heating electrode in a upward direction with respect to the substrate.

Abstract: A semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode, a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas, and a vent hole formed by penetrating the second insulation layer to communicate with the exposure hole, and the vent hole being capable of dissipating heat from the heating electrode in a upward direction with respect to the substrate.