Abstract: The present invention teaches the deposition of a pattern of interconnecting lines and bond pads. Passivation layers are deposited over this metal pattern. A layer of photosensitive polyimide is deposited over the passivation layers. This layer of photosensitive polyimide is patterned, exposed and developed to expose the underlying bonding pads. The remaining polyimide is cured and cross-linked and remains in place to serve as a buffer during further device packaging. Key to the present invention is that the remaining photosensitive polyimide is not removed after the bond pad has been exposed.

Abstract: Within a method for forming an isolation region within a semiconductor substrate, there is, prior to forming the isolation region within an isolation trench formed adjoining an active region of a semiconductor substrate, implanted a dopant into a corner of the active region. The corner of the active region is uncovered by laterally etching an isolation trench mask to form a laterally etched isolation trench mask which serves as an ion implantation mask layer when implanting the dopant into the corner of the active region. The method provides for enhanced performance, and minimal affect of a semiconductor device formed within the active region of the semiconductor substrate.

Abstract: A process is described for forming a microlens, either directly on a substrate or as part of a process to manufacture an optical imaging array. The process starts with the deposition of a layer of silicon oxide over the substrate, said layer being the determinant of the lens to substrate distance. This is followed by layers of polysilicon and silicon nitride. The latter is patterned to form a mask which protects the poly, except for a small circular opening, during its oxidation (under the same conditions as used for LOCOS). The oxide body that is formed is lens shaped, extending above the poly surface by about the same amount as below it, and just contacting the oxide layer. After the silicon nitride and all poly have been removed, the result is a biconvex microlens. In a second embodiment, a coating of SOG is provided that has a thickness equal to half the microlens thickness, thereby converting the latter to a plano-convex lens.

Abstract: A method to reduce the interface state density in MNOS (Conductor-Nitride-Oxide-Semiconductor) is disclosed. This method involves sintering an unpatterned Al film on top of an CVD oxide layer over MNOS capacitors to generate atomic hydrogen which diffuse through the nitride and oxide and passivate the interface states at Si/SiO.sub.2 interface.

Abstract: A method to reduce the dark current in CCD solid state imagers is disclosed. This method involves sintering an unpatterned Al film on top of an oxide layer at 450.degree. C. for a time to generate sufficient numbers of atomic hydrogen atoms to diffuse through the oxide layer and passivate the silicon surface states.