Patents by Inventor Yea-in Lee
Yea-in Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250065910Abstract: An apparatus for controlling an autonomous driving of a vehicle is introduced. The apparatus may comprise, a controller and memory storing instructions, when executed by the controller, configured to cause the apparatus to, receive global positioning system (GPS) information, High Definition (HD) map information, road information, and sensor information, wherein the GPS information, the HD map information, and the road information are related to one or more roads ahead of the vehicle, generate, based on the GPS information, the HD map information, road information, and the sensor information, road change information, wherein the road change information is related to whether a driving road which the vehicle travels on is changed to or from a road, and wherein the road is associated with a preset class, and output, based on the road change information, a signal for controlling the autonomous driving of the vehicle.Type: ApplicationFiled: July 18, 2024Publication date: February 27, 2025Inventors: Bong Kwan Choi, Yea Bin Lee, Dae Sung Hwang, Da Yeon Park
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Publication number: 20240199066Abstract: An autonomous driving control method receives a HD map and extracts a HD road boundary and a HD lane line based on the HD map. A real-time map displaying a road driving environment of a vehicle is generated using sensor information detected by a sensor mounted on the vehicle. A real-time road boundary and a real-time lane are extracted based on the generated real-time map. The HD road boundary is compared to and analyzed from the real-time road boundary, and the HD lane line is compared and analyzed to the real-time lane. It is determined whether the HD map has changed based on the analyzed result value.Type: ApplicationFiled: June 22, 2023Publication date: June 20, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Ho Jun Kim, Woo Joong Kim, Yea Bin Lee
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Publication number: 20240000854Abstract: A method for producing high-concentration stem cell exosomes with enhanced anti-inflammatory function using Lipopolysaccharide (LPS) and/or Lipoteichoic Acid (LTA), as well as anti-inflammatory and/or regenerative compositions that can be produced by the aforementioned method are disclosed. The production method for the anti-inflammatory composition includes a first step of treating stem cells during cultivation with one or more selected from a group consisting of Lipopolysaccharide (LPS) and Lipoteichoic Acid (LTA), and optionally, a second step of separating stem cells, their culture medium, and/or their exosomes obtained as a result of the first step.Type: ApplicationFiled: December 6, 2021Publication date: January 4, 2024Applicant: PRIMORIS THERAPEUTICS Co., Ltd.Inventors: Jae-yong LEE, Hee-jin AHN, Yea-in LEE, Dong-yeol LEE, Kyu-heum NA
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Publication number: 20230406897Abstract: A method for isolating and culturing umbilical cord blood stem cells that express high levels of GDF-3 is disclosed. Umbilical cord blood stem cells isolated and cultured as described herein exhibit high expression of GDF-3. Stem cells with high expression of GDF-3 maintain high proliferation capacity contrary to conventional stem cells even as passages progress, allowing for the advantage of obtaining a large quantity of healthy stem cells. Furthermore, due to the higher proliferation rate of stem cells, it has been observed that the concentration of extracellular matrix components secreted by the cells is also higher. Therefore, when utilizing GDF-3 high-expressing umbilical cord blood stem cells for the production of cell and culture medium compositions, it is possible to produce raw materials with excellent efficacy and effects.Type: ApplicationFiled: December 6, 2021Publication date: December 21, 2023Applicant: PRIMORIS THERAPEUTICS Co., Ltd.Inventors: Jae-yong LEE, Hee-jin AHN, Yea-in LEE, Dong-yeol LEE, Kyu-heum NA
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Publication number: 20230151331Abstract: The present invention relates to a method for preparing a culture medium containing exosomes released by umbilical cord blood stem cells. The preparation method is based on culturing the umbilical cord blood stem cells in a serum-free medium supplemented with GDF-11, EGF, FGF2, TFG-?1, and/or VEGF. The culture medium produced by treating umbilical cord blood stem cells with a serum-free medium supplemented with 5 types of growth factors and the exosomes isolated from the culture medium has a higher total protein content and extracellular matrix protein content, when compared to a culture medium produced by culturing umbilical cord blood stem cells in a serum-free medium to which the growth factor is not added. In addition, exosomes released by umbilical cord blood stem cells cultured in a serum-free medium containing five growth factors have a high concentration, a small size, and an even distribution.Type: ApplicationFiled: April 1, 2021Publication date: May 18, 2023Inventors: Dong-yeol Lee, Kuy-heum Na, Hee-jin Ahn, Jae-yong Lee, Yea-in Lee
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Publication number: 20230083143Abstract: A system for providing health information through a customized search that reflects individual health conditions includes the steps of: acquiring health condition information of a user, wherein the health condition information includes an analysis result of at least one test item; selecting at least one among recommended nutrients and restricted nutrients corresponding to at least one of the test items according to the analysis result; receiving a customized search request from the user, wherein the customized search request includes a search word corresponding to at least one search target among a food, a food material, a nutrient, and a health functional food; and providing health information including information on the search target and whether the user and the search target match based on at least one among the recommended nutrients and the restricted nutrients and the search word in response to the customized search request.Type: ApplicationFiled: September 7, 2022Publication date: March 16, 2023Inventor: Yea Hang LEE
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Publication number: 20220045350Abstract: A system for manufacturing a lithium ion secondary battery includes: an electrode assembly that includes a cathode electrode, an anode electrode, and a separator positioned between the cathode electrode and the anode electrode, and is impregnated with an electrolyte; a lithium part disposed on a surface of the electrode assembly, electrically connected to the cathode electrode or the anode electrode, and supplying lithium to the electrode assembly or receiving lithium deintercalated from the electrode assembly; and a controller allowing supply of lithium ions from the lithium part to the electrode assembly or allowing deintercalation of lithium ions from the electrode assembly.Type: ApplicationFiled: January 21, 2021Publication date: February 10, 2022Inventors: Sang Mok Park, Yea Yeon Lee, Seung Ho Ahn, Yoon Ji Lee
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Publication number: 20210140979Abstract: A method of diagnosing a periodontal condition using a protein showing a concentration difference between periodontal tissue in a normal condition and an abnormal condition from a subject's saliva is provided. According to this non-invasive method, the patient himself is able to check the presence of periodontal disease and identify the time to receive a treatment at an early stage, which will allow the patient to save time and cost for the treatment of periodontitis.Type: ApplicationFiled: November 11, 2020Publication date: May 13, 2021Applicants: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, THE CATHOLIC UNIVERSITY OF KOREA INDUSTRY-ACADEMIC COOPERATION FOUNDATION, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Suk JI, Young Kyung KO, Joo Cheol PARK, Man Bock GU, Seong Min BAK, Eun Mi LEE, Yea Jin LEE, Geum Bit HWANG, Bang Hyun LEE
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Patent number: 9907878Abstract: The present invention relates to a wet tissue containing a hot water extract of Coptidis Rhizoma extracted under high temperature and high pressure conditions, or a distillate thereof, and more specifically, to a wet tissue containing a hot water extract of Coptidis Rhizoma obtained by mixing 2,000-8,000 parts by weight of water on the basis of 100 parts by weight of Coptidis Rhizoma and extracting the same under high temperature and high pressure conditions of 120-131° C. and 1.2-2.8 atm, respectively, or a distillate thereof. The wet tissue containing a hot water extract of Coptidis Rhizoma or a distillate thereof shows remarkable antibacterial and fungicidal activities against pathogenic microorganisms existing in the skin and has an excellent inflammation inhibitory effect, and thus can be readily used for cleaning the skin and alleviating various inflammatory diseases.Type: GrantFiled: July 10, 2013Date of Patent: March 6, 2018Inventors: Yea Sung Lee, Yeon Ju Yu
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Publication number: 20160035933Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.Type: ApplicationFiled: October 14, 2015Publication date: February 4, 2016Inventors: Yea-Chen LEE, Jung-Tang CHU, Ching-Hua CHIU, Hung-Wen HUANG
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Publication number: 20150209467Abstract: The present invention relates to a wet tissue containing a hot water extract of Coptidis Rhizoma extracted under high temperature and high pressure conditions, or a distillate thereof, and more specifically, to a wet tissue containing a hot water extract of Coptidis Rhizoma obtained by mixing 2,000-8,000 parts by weight of water on the basis of 100 parts by weight of Coptidis Rhizoma and extracting the same under high temperature and high pressure conditions of 120-131° C. and 1.2-2.8 atm, respectively, or a distillate thereof. The wet tissue containing a hot water extract of Coptidis Rhizoma or a distillate thereof shows remarkable antibacterial and fungicidal activities against pathogenic microorganisms existing in the skin and has an excellent inflammation inhibitory effect, and thus can be readily used for cleaning the skin and alleviating various inflammatory diseases.Type: ApplicationFiled: July 10, 2013Publication date: July 30, 2015Inventors: Yea Sung LEE, Yeon Ju YU
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Patent number: 9065015Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.Type: GrantFiled: September 27, 2013Date of Patent: June 23, 2015Assignee: TSMC SOLID STATE LIGHTING LTD.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Publication number: 20140021483Abstract: A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.Type: ApplicationFiled: September 27, 2013Publication date: January 23, 2014Applicant: TSMC Solid State Lighting Ltd.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Patent number: 8546165Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.Type: GrantFiled: September 8, 2011Date of Patent: October 1, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang, Yea-Chen Lee, Hsing-Kuo Hsia
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Publication number: 20130187122Abstract: The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.Type: ApplicationFiled: January 19, 2012Publication date: July 25, 2013Applicant: TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Gang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Publication number: 20130140592Abstract: A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 ?m, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.Type: ApplicationFiled: December 1, 2011Publication date: June 6, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Publication number: 20130095581Abstract: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.Type: ApplicationFiled: October 18, 2011Publication date: April 18, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Publication number: 20120104409Abstract: A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.Type: ApplicationFiled: September 8, 2011Publication date: May 3, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Tang CHU, Ching-Hua CHIU, Hung-Wen HUANG, Yea-Chen LEE, Hsing-Kuo HSIA
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Patent number: 8158998Abstract: The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.Type: GrantFiled: August 18, 2010Date of Patent: April 17, 2012Assignee: High Power Opto, Inc.Inventors: Liang-Jyi Yan, Yea-Chen Lee
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Publication number: 20120043522Abstract: The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.Type: ApplicationFiled: August 18, 2010Publication date: February 23, 2012Inventors: Liang-Jyi YAN, Yea-Chen Lee