Patents by Inventor Yea-Jer Arthur Chen

Yea-Jer Arthur Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010002326
    Abstract: A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density, low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.
    Type: Application
    Filed: January 18, 2001
    Publication date: May 31, 2001
    Inventors: Yun-Yen Jack Yang, Ching-Hwa Chen, Yea-Jer Arthur Chen
  • Patent number: 6221792
    Abstract: A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: April 24, 2001
    Assignee: Lam Research Corporation
    Inventors: Yun-Yen Jack Yang, Ching-Hwa Chen, Yea-Jer Arthur Chen