Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.

Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.

Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.

Abstract: An injection mold insert with hierarchical structures and a method for method of making such injection mold inserts are provided. The method includes imprinting a primary imprint structure on an article and imprinting a secondary imprint structure on the primary imprint structure on the article. The secondary imprint structure includes a plurality of shapes, each of the plurality of shapes being substantially smaller than shapes of the primary imprint structure. The method further includes bonding the article to a substrate, sputter-coating the article with a metal film as an electroforming seed layer, and electroforming the injection mold insert over the article. Finally, the method includes dissolving the article to define the injection mold insert having a negative replica of the primary and secondary imprint structures.

Abstract: The present invention provides a textured polymer substrate comprising nano-sized surface features that are arranged in a single array or in a hierarchical array, and at least one layer of an amorphous, hydrophilic layer deposited thereon. The disclosed textured polymer substrate is advantageously suited for providing anti-reflective, anti-fogging and anti-UV materials.

Abstract: A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.

Abstract: The present invention relates to a method of forming an imprint on a metal substrate. The method comprises a step of providing a mold having a defined imprint surface pattern in the nano-sized or micro-sized range and a step of pressing the metal substrate against the mold at hot-working temperature to form a nano-sized or micro-sized imprint thereon.

Abstract: According to one aspect of the invention, there is provided a method of forming a film with a lenticular lens array, the method comprising providing a substrate; providing a mold having a plurality of nano-scale to micro-scale cavities that form the lenticular lens array on the substrate; having the mold contact the substrate; and forming the lenticular lens array by allowing portions of the substrate to partially fill the plurality of cavities.

Abstract: For forming a nickel mold, a metal and a corresponding etchant are selected such that the etchant selectively etches the metal over nickel. The metal is sputtered onto a surface of a template having nano-structures to form a sacrificial layer covering the nano-structures. Nickel is electroplated onto the sacrificial layer to form a nickel mold, but leaving a portion of the sacrificial layer exposed. The sacrificial layer is contacted with the etchant through the exposed portion of the sacrificial layer to etch away the sacrificial layer until the nickel mold is separated from the template. Subsequently, the nickel mold may be replicated or scaled-up to produce a replicate mold by electroplating, where the replicate mold has nano-structures that match the nano-structures on the template. The metal may be copper.

Abstract: For forming a nickel mold, a metal and a corresponding etchant are selected such that the etchant selectively etches the metal over nickel. The metal is sputtered onto a surface of a template having nano-structures to form a sacrificial layer covering the nano-structures. Nickel is electroplated onto the sacrificial layer to form a nickel mold, but leaving a portion of the sacrificial layer exposed. The sacrificial layer is contacted with the etchant through the exposed portion of the sacrificial layer to etch away the sacrificial layer until the nickel mold is separated from the template. Subsequently, the nickel mold may be replicated or scaled-up to produce a replicate mold by electroplating, where the replicate mold has nano-structures that match the nano-structures on the template. The metal may be copper.