Patents by Inventor Yee Fun Lim

Yee Fun Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240403716
    Abstract: The apparatus (100A) comprises a cover plate (102) for focusing a terahertz beam (108) and a bottom plate (104) for enhancing an absorption signal of a sample (106) to the terahertz beam (108). The apparatus (100A) comprises a terahertz time-domain spectroscopy module (110) for acquiring (802) terahertz time-domain spectroscopy (THz TDS) data. The apparatus (100A) comprises a processor (120) configured to implement a trained machine learning model (130) that is trained on training dataset (114) comprising a pure compound dataset (114a) and a mixture dataset (114b). The trained machine learning model (130) is configured to process (804) an acquired THz TDS data (116) for obtaining a reduced dimensionality dataset (118); extract (806) at least one feature (118a) from the reduced dimensionality dataset (118); generate (808) a classification label (122) for the reduced dimensionality dataset (118); and indicate (810) a probability of identifying the chemical compound (112).
    Type: Application
    Filed: June 20, 2022
    Publication date: December 5, 2024
    Inventors: Nan ZHANG, Yee Fun LIM, Zi Xi Josie LIM, Wei Ji PHUA
  • Publication number: 20240307842
    Abstract: The present disclosure generally relates to a flow reactor system (100) and a flow reaction method (200). The flow reactor system (100) comprises liquid pumps (110) for communicating liquid reagents based on a set of flow conditions, a fluid pump (200) for communicating a carrier fluid that is immiscible with the liquid reagents; a fluidic mixer (130) for mixing the liquid reagents into a liquid mixture, a measurement device (150) for measuring properties of liquid plugs (140) discharged from an outlet (136) of the fluidic mixer (130); and a control module configured for controlling the liquid pumps (110) and adjusting the flow conditions based on the measured properties of the liquid plugs (140), wherein the liquid plugs (140) are representative of different flow conditions.
    Type: Application
    Filed: July 20, 2022
    Publication date: September 19, 2024
    Inventors: Yee Fun LIM, Yang XU, Jian Wei Jayce CHENG, Swee Liang WONG, Vijila CHELLAPPAN, Jatin KUMAR, Daniil BASH, Tonio BUONASSISI, Kedar HIPPALGAONKAR
  • Publication number: 20240301550
    Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.
    Type: Application
    Filed: May 7, 2024
    Publication date: September 12, 2024
    Inventors: Swee Liang Wong, Yee Fun Lim, Dongzhi Chi
  • Patent number: 12006569
    Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: June 11, 2024
    Assignee: Agency for Science, Technology and Research
    Inventors: Swee Liang Wong, Yee Fun Lim, Dongzhi Chi
  • Publication number: 20230295461
    Abstract: A method of producing a silica-based superhydrophilic film. A coating formulation is provided, where the coating formulation includes an alkali metal silicate having a substantial portion of water removed therefrom, where the alkali metal silicate has a formula of M2O·nSiO2, and where M represents an alkali metal and n is a positive real number greater than zero. Furthermore, the coating formulation and an alcohol including a curing agent are mixed, where the curing agent includes an acid or an alkaline earth metal halide. Additionally, the coating formulation is dried to form the silica-based superhydrophilic film. Furthermore, a silica-based superhydrophilic film is produced according to such a method, where the silica-based superhydrophilic film includes an amine stabilizer.
    Type: Application
    Filed: August 3, 2021
    Publication date: September 21, 2023
    Inventors: Yee Fun Lim, Gregory Kia Liang Goh, John Chapman-Fortune
  • Publication number: 20220178018
    Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate.
    Type: Application
    Filed: March 11, 2020
    Publication date: June 9, 2022
    Inventors: Swee Liang Wong, Yee Fun Lim, Dongzhi Chi
  • Patent number: 9423295
    Abstract: According to one aspect of the invention, there is provided a photo-sensor comprising: an optically transparent substrate; an electrode pair; and a photoactive film with electrical polarization located between the optically transparent substrate and the electrode pair, wherein the optically transparent substrate is configured to transmit incident radiation received by the optically transparent substrate to the photoactive film and wherein the electrode pair is configured to receive charge carriers generated by the photoactive film in response to the transmitted incident radiation.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: August 23, 2016
    Assignee: Agency for Science, Technology and Research
    Inventors: Szu Cheng Lai, Kui Yao, Yi Fan Chen, Yee Fun Lim
  • Publication number: 20140319317
    Abstract: According to one aspect of the invention, there is provided a photo-sensor comprising: an optically transparent substrate; an electrode pair; and a photoactive film with electrical polarization located between the optically transparent substrate and the electrode pair, wherein the optically transparent substrate is configured to transmit incident radiation received by the optically transparent substrate to the photoactive film and wherein the electrode pair is configured to receive charge carriers generated by the photoactive film in response to the transmitted incident radiation.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Applicant: Agency for Science, Technology and Research
    Inventors: Szu Cheng Lai, Kui Yao, Yi Fan Chen, Yee Fun Lim