Abstract: A vortex mask comprises a substrate, a first phase region positioned on the substrate, a second phase region surrounding the first phase region, and a third phase region positioned on the substrate and connected to the first phase region and the second phase region. When exposure beams penetrate the first phase region, the second phase region and the third region of the vortex mask, there will be 90 degrees of phase difference from each other. In addition, the first phase region and the third phase region can be positioned in a mirror image manner, and the third phase region connects to the first phase region and the second phase region in a point manner, which can be used to define the shape of a circular pattern.

Abstract: A phase shifting mask capable of decreasing the optical proximity effect comprises a substrate and at least one phase shifting pattern positioned on the substrate, wherein the phase shifting pattern surrounds at least one optical correction pattern. Preferably, the optical correction pattern is an aperture exposing the substrate, and positioned on an intersection or a corner of the phase shifting pattern. The method for preparing the phase shifting mask comprises steps of forming a polymer layer on a substrate, illuminating a first predetermined region of the polymer layer by an electron beam to change the molecular structure of the polymer layer in the first predetermined region, which surrounds at least one second predetermined region. Subsequently, the polymer layer outside the first predetermined region is removed to form a phase shifting pattern, while the second predetermined region forms an optical correction pattern.

Abstract: A method for shrinking opening sizes of a photoresist is provided. A patterned photoresist layer having an opening is formed on a substrate. The opening includes a first size. The photoresist layer is baked at a temperature below a glass transition temperature of the photoresist layer. A layer of SAFIER material is formed on the photoresist layer and the substrate. The layer of SAFIER material and the photoresist layer are baked at a temperature higher than the glass transition temperature to shrink the size of the opening. The layer of SAFIER material is removed. The first size of the opening is thus shrunk to a second size.