Abstract: A phase-shifting mask comprises a substrate and a plurality of phase-shifting patterns made of polymer material and positioned on the substrate in an array manner. Preferably, the space between phase-shifting patterns is smaller than the width of the phase-shifting pattern along a first direction, and the space between two line-shaped patterns consisting of phase-shifting patterns is substantially equal to the width of the line-shaped pattern along a second direction perpendicular to the first direction. The present method for preparing the phase-shifting mask comprises steps of forming a polymer layer on a substrate, changing the molecular structure the polymer layer in a plurality of predetermined regions, and removing a portion of the polymer layer outside these predetermined regions. The polymer layer can be made of hydrogen silsesquioxane, methylsilsesquioxane or hybrid organic siloxane polymer.

Abstract: The present phase-shifting mask comprises a substrate and a plurality of phase-shifting patterns made of polymer material and positioned on the substrate in an array manner. Preferably, the space between phase-shifting patterns is smaller than the width of the phase-shifting pattern along a first direction, and the space between two line-shaped patterns consisting of phase-shifting patterns is substantially equal to the width of the line-shaped pattern along a second direction perpendicular to the first direction. The present method for preparing the phase-shifting mask comprises steps of forming a polymer layer on a substrate, changing the molecular structure the polymer layer in a plurality of predetermined regions, and removing a portion of the polymer layer outside these predetermined regions. The polymer layer can be made of hydrogen silsesquioxane, methylsilsesquioxane or hybrid organic siloxane polymer.

Abstract: The present method for preparing a Levenson phase shifting mask first forms a metal layer on a substrate, and an etching process is performed to form a plurality of openings in the metal layer. A spin-coating process is performed to form a polymer layer on the substrate, an electron beam is then used to irradiate on a predetermined region of the polymer layer, and the polymer layer outside the predetermined region is removed. The polymer layer may consist of hydrogen silsesquioxane (HSQ), methylsilsesquioxane (MSQ) or hybrid organic siloxane polymer (HOSP), and an alkaline solution, alcohol solution or propyl acetate can be used to remove the polymer layer outside the predetermined region. The alkaline solution is selected from the group consisting of sodium hydroxide (NaOH), potassium hydroxide (KOH) and tetramethylamomnium hydroxide (TMAH).