Patents by Inventor Yee Ming Chan

Yee Ming Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11371084
    Abstract: Methods and systems described herein involve using long cell-free DNA fragments to analyze a biological sample from a pregnant subject. The status of methylated CpG sites and single nucleotide polymorphisms (SNPs) is often used to analyze DNA fragments of a biological sample. A CpG site and a SNP are typically separated from the nearest CpG site or SNP by hundreds or thousands of base pairs. Finding two or more consecutive CpG sites or SNPs on most cell-free DNA fragments is improbable or impossible. Cell-free DNA fragments longer than 600 bp may include multiple CpG sites and/or SNPs. The presence of multiple CpG sites and/or SNPs on long cell-free DNA fragments may allow for analysis than with short cell-free DNA fragments alone. The long cell-free DNA fragments can be used to identify a tissue of origin and/or to provide information on a fetus in a pregnant female.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: June 28, 2022
    Assignee: The Chinese University of Hong Kong
    Inventors: Yuk-Ming Dennis Lo, Rossa Wai Kwun Chiu, Kwan Chee Chan, Peiyong Jiang, Suk Hang Cheng, Cheuk Yin Yu, Yee Ting Cheung, Wenlei Peng
  • Patent number: 11282744
    Abstract: Device and method of forming the device are disclosed. A semiconductor device includes a back-end-of-line dielectric (BEOL) with a plurality of IMD levels over a substrate processed with front-end-of-line components. The BEOL includes an upper IMD level and upper metal lines, with a buffer layer over the upper metal lines. The buffer layer improves adhesion of the upper IMD layer which covers the upper metal lines. Improving the adhesion of the upper IMD layer improves the reliability of the device.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 22, 2022
    Assignee: Systems On Silicon Manufacturing Co. Pte. Ltd.
    Inventors: Pankaj Kumar Uttwani, Shankaran Chelliah, Yee Ming Chan
  • Publication number: 20210098289
    Abstract: Device and method of forming the device are disclosed. A semiconductor device includes a back-end-of-line dielectric (BEOL) with a plurality of IMD levels over a substrate processed with front-end-of-line components. The BEOL includes an upper IMD level and upper metal lines, with a buffer layer over the upper metal lines. The buffer layer improves adhesion of the upper IMD layer which covers the upper metal lines. Improving the adhesion of the upper IMD layer improves the reliability of the device.
    Type: Application
    Filed: September 30, 2019
    Publication date: April 1, 2021
    Inventors: Pankaj Kumar UTTWANI, Shankaran CHELLIAH, Yee Ming CHAN
  • Patent number: D474175
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: May 6, 2003
    Assignee: Emerson Radio Corp.
    Inventors: Kazuo Furusho, Edward Arthur Holland, Yee Ming Chan, Edison Yip, Ho Kit Chan, John Joseph Raab
  • Patent number: D474176
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: May 6, 2003
    Assignee: Emerson Radio Corp.
    Inventors: Kazuo Furusho, Edward Arthur Holland, Yee Ming Chan, Edison Yip, Ho Kit Chan, John Joseph Raab
  • Patent number: D474177
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: May 6, 2003
    Assignee: Emerson Radio Corp.
    Inventors: Kazuo Furusho, Edward Arthur Holland, Yee Ming Chan, Edison Yip, Ho Kit Chan, John Joseph Raab
  • Patent number: D479223
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: September 2, 2003
    Assignee: Emerson Radio Corp.
    Inventors: Kazuo Furusho, Edward Arthur Holland, Yee Ming Chan, Edison Yip, Ho Kit Chan, John Joseph Raab