Patents by Inventor Yee-Wen Chen

Yee-Wen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240355826
    Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.
    Type: Application
    Filed: July 1, 2024
    Publication date: October 24, 2024
    Inventors: Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu, Cheng-Hsiung Yen, Jui-Hsuan Chen, Chii-Horng Li, Yee-Chia Yeo, Heng-Wen Ting, Ming-Hua Yu
  • Patent number: 12057450
    Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: August 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu, Cheng-Hsiung Yen, Jui-Hsuan Chen, Chii-Horng Li, Yee-Chia Yeo, Heng-Wen Ting, Ming-Hua Yu
  • Patent number: 9459319
    Abstract: A device and a method for generating input control signals of a serialized compressed scan circuit are provided. A control signal generating device receives a test clock signal from a clock input port and a state enable signal from a state enable bus, and correspondingly generates a shift enable signal, a capture enable signal and a strobe signal. A clock gating device is coupled to the control signal generating device, and receives the shift enable signal, the capture enable signal and the strobe signal. When the shift enable signal is enabled, the clock gating device controls the test clock signal as a serialized scan clock signal. When the strobe signal or the capture enable signal is enabled, the clock gating device controls the test clock signal as a scan clock signal.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: October 4, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-An Chen, Yee-Wen Chen, Ming-Hsueh Wu, Kun-Lun Luo
  • Publication number: 20150036783
    Abstract: A device and a method for generating input control signals of a serialized compressed scan circuit are provided. A control signal generating device receives a test clock signal from a clock input port and a state enable signal from a state enable bus, and correspondingly generates a shift enable signal, a capture enable signal and a strobe signal. A clock gating device is coupled to the control signal generating device, and receives the shift enable signal, the capture enable signal and the strobe signal. When the shift enable signal is enabled, the clock gating device controls the test clock signal as a serialized scan clock signal. When the strobe signal or the capture enable signal is enabled, the clock gating device controls the test clock signal as a scan clock signal.
    Type: Application
    Filed: July 30, 2014
    Publication date: February 5, 2015
    Inventors: Chen-An Chen, Yee-Wen Chen, Ming-Hsueh Wu, Kun-Lun Luo
  • Patent number: 8867286
    Abstract: A repairable multi-layer memory chip stack wherein each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: October 21, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Hsueh Wu, Kun-Lun Luo, Chen-An Chen, Yee-Wen Chen
  • Publication number: 20130155794
    Abstract: A repairable multi-layer memory chip stack is provided. Each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.
    Type: Application
    Filed: June 27, 2012
    Publication date: June 20, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ming-Hsueh Wu, Kun-Lun Luo, Chen-An Chen, Yee-Wen Chen
  • Patent number: 6789248
    Abstract: A method and system for the design of an electronic device adjusts the resistance and capacitance values employed in preliminary timing analysis during physical synthesis of the electronic device. The physical synthesis uses resistance and capacitance unit values to determine the listing of the component circuits. The resistance and capacitance unit values are calibrated by preliminarily placing the initially synthesized component circuits to create a listing describing physical locations of the component circuits within the electronic device. A preliminary routing of the interconnections is performed to create a listing describing a network of physical wire segments that form each interconnection of the component circuits. A timing analysis of the electronic device determines the delay created by the component circuit and the networks of physical wire segments.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: September 7, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Lee-Chung Lu, Cliff Hou, Chia-Lin Cheng, Chung-Hsing Wang, Hsing-Chien Huang, Yee-Wen Chen, Tsui-Ping Wang