Abstract: A solder paste includes a first solder alloy powder in an amount ranging from 30% to 95% by weight. The first solder alloy powder includes a first solder alloy with a solidus temperature of 200° C. to 260° C. The first solder alloy includes an Sn—Cu alloy or an Sn—Cu—Ag alloy. The solder paste further includes a second solder alloy powder in an amount ranging from 5% to 70% by weight, and a solder flux. The second solder alloy powder includes a second solder alloy with a solidus temperature below 250° C. The solder paste has a variable melting point. In multiple reflow soldering, a remelting of the solder paste is inhibited under different temperature conditions so that no functional failure occurs during assembly and/or packaging of PCBs or electronic devices due to melting of solder.

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract: The present invention relates to a method for manufacturing Ni/In/Sn/Cu multilayer structure, in which a Ni/In/Sn/Cu multilayer structure is formed between a first substrate (copper substrate) and a second substrate (such as silicon wafer), and further, a plurality of intermetallic layers are formed in the Ni/In/Sn/Cu multilayer structure through a reflow bonding process and an aging heat treatment, wherein the intermetallic layers comprises a first intermetallic layer of (Cu,Ni)6(Sn,In)5, a second intermetallic layer of (Cu,Ni)6(Sn,In)5 and a third intermetallic layer of (Cu,Ni)3(Sn,In)4. Therefore, the formed intermetallic layers makes the Ni/In/Sn/Cu multilayer structure performs good wettability, ductility, creep resistance, and fatigue resistance.

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract: A high-temperature solder with multi-layer structure and method for manufacturing the same are disclosed. The high-temperature solder with multi-layer structure comprises: at least one first substrate and a second substrate. Wherein a first metal layer is formed on one surface of the first substrate by way of electroplating, and a second metal layer and a third metal layer are sequentially formed on the two surfaces of the second substrate through the electroplating. The first substrate is stacked on the third metal layer of the second substrate by the surface thereof provided with the first metal layer, so that the third metal layer and the first metal layer may jointly form an intermetallic (IMC) layer by way of the solid-liquid interdiffusion joint, in which the IMC layer includes at least one intermetallic compound for making the melting point of the high-temperature solder with multi-layer structure higher than 300-deg Celsius.

Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, forming a tin layer to cover the surface of the metal substrate, and treating the metal substrate covered the tin layer by an annealing process, wherein the annealing process is performed at 400° C.-600° C. and the surface of the tin layer is subsequently inhibited from growing tin whiskers.

Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.

Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, forming a tin layer to cover the surface of the metal substrate, and treating the metal substrate covered the tin layer by an annealing process, wherein the annealing process is performed at 400° C.-600° C. and the surface of the tin layer is subsequently inhibited from growing tin whiskers.

Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, treating the metal substrate by an annealing process, and forming a tin layer to cover a surface of the metal substrate, wherein the surface of the tin layer has no tin whisker.

Abstract: A whisker-free coating structure and a method for fabricating the same are disclosed. The whisker-free coating structure includes a substrate, a tungsten doped copper layer overlaying the substrate, and a lead-free tin layer overlaying the tungsten doped copper layer.

Abstract: A method of bonding a solder ball and a base plate and a method of manufacturing a packaging structure using the same are provided. The method of bonding a solder ball and a base plate includes the following steps. First, a base plate including an electrode layer and a base material layer is provided. The electrode layer is disposed on the base material layer. Next, a barrier layer is formed on the electrode layer. Then, a metal layer is formed on the barrier layer. The thickness of the metal layer is about 10˜18 micrometers. Further, a solder ball is disposed on the metal layer. Afterwards, the solder ball, the metal layer, the barrier layer and the electrode layer are heated to a reacting temperature and kept for a holding time.