Patents by Inventor Yeeling L. Lee

Yeeling L. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6455331
    Abstract: A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: September 24, 2002
    Assignee: International Business Machines Corporation
    Inventors: Roy Yu, Kamalesh S. Desai, Peter A. Franklin, Suryanarayana Kaja, Kimberley A. Kelly, Yeeling L. Lee, Arthur G. Merryman, Frank R. Morelli, Thomas A. Wassick
  • Publication number: 20010023081
    Abstract: A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.
    Type: Application
    Filed: May 29, 2001
    Publication date: September 20, 2001
    Inventors: Roy Yu, Kamalesh S. Desal, Peter A. Franklin, Suryanatayana Kala, Kimberley A. Kelly, Yeeling L. Lee, Arthur G. Merryman, Frank R. Morelll, Thomas A. Wassick
  • Patent number: 6248599
    Abstract: A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.
    Type: Grant
    Filed: December 2, 1999
    Date of Patent: June 19, 2001
    Assignee: International Business Machines Corporation
    Inventors: Roy Yu, Kamalesh S. Desai, Peter A. Franklin, Suryanarayana Kaja, Kimberley A. Kelly, Yeeling L. Lee, Arthur G. Merryman, Frank R. Morelli, Thomas A. Wassick
  • Patent number: 6048741
    Abstract: A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: April 11, 2000
    Assignee: International Business Machines Corporation
    Inventors: Roy Yu, Kamalesh S. Desai, Peter A. Franklin, Suryanarayana Kaja, Kimberley A. Kelly, Yeeling L. Lee, Arthur G. Merryman, Frank R. Morelli, Thomas A. Wassick