Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. A method for fabricating the semiconductor device may include forming a plurality of spacers, performing a first etching process to form a plurality of trenches, removing the plurality of spacers, performing a second etching process to form a shaped cavity, and filing the shaped cavity with silicon and germanium material.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with SiGe material. The shape cavity comprises convex regions interfacing the substrate. There are other embodiments as well.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with SiGe material. The shape cavity comprises convex regions interfacing the substrate. There are other embodiments as well.

Abstract: The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

Abstract: A method for fabricating a capacitor includes providing a substrate having a first surface and a second surface, and forming a plurality of openings in the substrate, the openings are separated from each other by a shape of the substrate, each opening having sidewalls and a bottom. The method further includes submitting the substrate including the openings to an oxidation process to form an oxide layer covering the sidewalls and the bottom of the openings, and a portion of a surface of the substrate, wherein a shape of the substrate disposed between a pair of two adjacent openings is completely oxidized to form an insulation layer between the pair of two adjacent openings; and depositing a conductive material layer over the oxide layer in the openings such that the conductive material layer is electrically continuous and such that the pair of adjacent openings form a capacitor.

Abstract: A method for fabricating a capacitor includes providing a substrate having a first surface and a second surface, and forming a plurality of openings in the substrate, the openings are separated from each other by a shape of the substrate, each opening having sidewalls and a bottom. The method further includes submitting the substrate including the openings to an oxidation process to form an oxide layer covering the sidewalls and the bottom of the openings, and a portion of a surface of the substrate, wherein a shape of the substrate disposed between a pair of two adjacent openings is completely oxidized to form an insulation layer between the pair of two adjacent openings; and depositing a conductive material layer over the oxide layer in the openings such that the conductive material layer is electrically continuous and such that the pair of adjacent openings form a capacitor.