Patents by Inventor Yeh-Chien Lin

Yeh-Chien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device fabrication with removal of accumulation of material from sidewall
    Patent number: 12014933
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: June 18, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yan-Hong Liu, Yeh-Chien Lin, Jin-Huai Chang
  • SEMICONDUCTOR DEVICE FABRICATION WITH REMOVAL OF ACCUMULATION OF MATERIAL FROM SIDEWALL
    Publication number: 20220122850
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Yan-Hong LIU, Yeh-Chien LIN, Jin-Huai CHANG
  • Semiconductor device fabrication with removal of accumulation of material from sidewall
    Patent number: 11211257
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yan-Hong Liu, Yeh-Chien Lin, Jin-Huai Chang
  • SEMICONDUCTOR DEVICE FABRICATION WITH REMOVAL OF ACCUMULATION OF MATERIAL FROM SIDEWALL
    Publication number: 20200075347
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.
    Type: Application
    Filed: July 1, 2019
    Publication date: March 5, 2020
    Inventors: Yan-Hong LIU, Yeh-Chien Lin, Jin-Huai Chang