Abstract: The invention provides an antenna-in-module (AiM) and related method with improved performances. The AiM may comprise a plurality of radiators, port-one terminals and port-two terminals; the port-one and port-two terminals may be coupled to the radiators respectively. The AIM may implement a mode-one wireless communication by excitations of a plurality of phase-shifted versions of a mode-one signal respectively at the plurality of port-one terminals, may implement a mode-two wireless communication by excitations of a plurality of phase-shifted versions of a mode-two signal respectively at the plurality of port-two terminals, and may implement a mode-three wireless communication by simultaneous excitations of a first plurality and a second plurality of phase-shifted versions of a mode-three signal respectively at the plurality of port-one terminals and the plurality of port-two terminals. Polarizations of the mode-one, mode-two and the mode-three wireless communications may be different.

Abstract: A radio frequency (RF) system and a communication device are provided. The RF system includes a flexible circuit board, a first antenna module and a RF module. The flexible circuit board has a first surface and a second surface, and the first surface and the second surface are located at different sides of the flexible circuit board. The first antenna module is disposed on the first surface of the flexible circuit board. The first antenna module includes a first carrier, a first antenna element disposed on or in the first carrier, and a first conductive member between the first carrier and the flexible circuit board. The RF module is disposed on the second surface of the flexible circuit board and electrically connected to the first antenna module.

Abstract: A multiband antenna array is provided. The multiband antenna array includes a first multi-band antenna unit, a first high band antenna member, and a first low band antenna member. The first multi-band antenna unit includes a first high band antenna element and a first low band antenna element. A first distance is formed between the center of the first multi-band antenna unit and the center of the first high band antenna member. The first distance is 0.3˜0.8 times the wavelength of a high band signal. A second distance is formed between the center of the first multi-band antenna unit and the center of the first low band antenna member. The second distance is 0.3˜0.8 times the wavelength of a low band signal.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.

Abstract: A test kit for testing a device under test (DUT) includes a socket structure for containing the DUT. The DUT includes an antenna and radiates a RF signal. The test kit further includes a reflector having a lower surface. The RF signal emitted from the antenna of the DUT is reflected by the reflector and a reflected RF signal is received by the antenna of the DUT.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

Abstract: An antenna module includes a first dielectric layer, an antenna layer, an electronic element and a first antenna tuning element. The first dielectric layer has an first dielectric surface and a second dielectric surface opposite to the first dielectric surface in a thickness direction. The antenna layer is formed in the first dielectric layer or formed on the first dielectric surface. The electronic element is disposed near to the second dielectric surface than to the first dielectric surface. The first antenna tuning element is formed on one of the first dielectric surface and the second dielectric surface and connected to the antenna layer. The first antenna tuning element and the electronic element are disposed in the thickness direction.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.

Abstract: A radio frequency (RF) system and a communication device are provided. The RF system includes a flexible circuit board, a first antenna module and a RF module. The flexible circuit board has a first surface and a second surface, and the first surface and the second surface are located at different sides of the flexible circuit board. The first antenna module is disposed on the first surface of the flexible circuit board. The first antenna module includes a first carrier, a first antenna element disposed on or in the first carrier, and a first conductive member between the first carrier and the flexible circuit board. The RF module is disposed on the second surface of the flexible circuit board and electrically connected to the first antenna module.

Abstract: An antenna device includes a first dipole antenna, a second loop shaped antenna, a first feed line and a second feed line. The first dipole antenna operates at a first frequency band. The first dipole antenna includes a first portion and a second portion. The second loop shaped antenna operates at a second frequency band different from the first frequency band. A first terminal of the second loop shaped antennal is coupled to a second terminal of the first portion of the first dipole antenna. A second terminal of the second loop shaped antenna is coupled to a first terminal of the second portion of the first dipole antenna. The first feed line is coupled to the second terminal of the first portion of the first dipole antenna. The second feed line is coupled to the first terminal of the second portion of the first dipole antenna.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

Abstract: A test kit for testing a device under test (DUT) includes a socket structure for containing the DUT. The DUT includes an antenna and radiates a RF signal. The test kit further includes a reflector having a lower surface. The RF signal emitted from the antenna of the DUT is reflected by the reflector and a reflected RF signal is received by the antenna of the DUT.

Abstract: A multi-band dual-polarized antenna structure is provided. The multi-band dual-polarized antenna structure includes a first antenna array, a second antenna array and a third antenna array. The first antenna array is arranged in a first row and operating at a first frequency. The second antenna array is arranged in a second row, operates at a second frequency and has a first polarized direction. The third antenna array is arranged in the second row, operates at the second frequency and has a second polarized direction different from the first polarized direction.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

Abstract: A millimeter wave antenna device includes an antenna array, a first parasitic element and a second parasitic element. The antenna array includes m×n antennas and is disposed in an antenna area. The first parasitic element is disposed beside a first side of the antenna area. The second parasitic element is disposed beside a second side of the antenna area. None of the first parasitic element and the second parasitic element overlaps with the antenna area.

Abstract: An antenna assembly includes a first antenna element coupled to RF circuitry via a first feeder, and a second antenna element coupled to the RF circuitry via a second feeder. The first feeder and the second feeder have different shapes. The first antenna element and the second antenna element radiate in different frequency bands and in a direction parallel to a ground plane. The ground plane is disposed on at least one layer in a substrate that includes a plurality of layers parallel to one another. The first antenna element is disposed on first one or more of the layers and the second antenna element is disposed on second one or more of the layers, which are different from the first one or more of the layers. Another antenna assembly includes a first subarray of the first antenna elements and a second subarray of the second antenna elements.

Abstract: A multi-band antenna array includes first antenna elements and second antenna elements. Each first antenna element has a first shape spanned by a first long axis and a first short axis, the first long axis being longer than and perpendicular to the first short axis. Each second antenna element has a second shape spanned by a second long axis and a second short axis, the second long axis being longer than and perpendicular to the second short axis. The first long axis is non-parallel to the second long axis. The first antenna element and the second antenna element resonate at a high resonance frequency band along the first long axis and the second long axis, respectively, and the first antenna element and the second antenna element further resonate at a low resonance frequency band along the first short axis and the second short axis, respectively.

Abstract: A millimeter wave antenna device includes an antenna array, a first parasitic element and a second parasitic element. The antenna array includes m×n antennas and is disposed in an antenna area. The first parasitic element is disposed beside a first side of the antenna area. The second parasitic element is disposed beside a second side of the antenna area. None of the first parasitic element and the second parasitic element overlaps with the antenna area.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

Abstract: A multi-band dual-polarized antenna structure is provided. The multi-band dual-polarized antenna structure includes a first antenna array, a second antenna array and a third antenna array. The first antenna array is arranged in a first row and operating at a first frequency. The second antenna array is arranged in a second row, operates at a second frequency and has a first polarized direction. The third antenna array is arranged in the second row, operates at the second frequency and has a second polarized direction different from the first polarized direction.