Patents by Inventor Yeh Jun-Lin

Yeh Jun-Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6795344
    Abstract: A floating gate memory architecture having current regulator is disclosed. A floating gate memory block have at least a programming voltage node for being programmed a plurality of bits according to the control of a plurality of bit lines. A high voltage source provides a regulated voltage when the plurality of bits are programmed in. A high voltage decoder locates between the floating gate memory block and the high voltage source for connecting the voltage to the programming voltage node according to the programming data of the floating gate memory block. A current regulator connects to the programming voltage node for keeping the programming voltage node in a constant voltage, and making a constant current flowing into said floating gate memory block according to said plurality of bits.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: September 21, 2004
    Assignee: Winbond Electronics Corp.
    Inventor: Yeh Jun Lin
  • Patent number: 6707717
    Abstract: A current sense amplifier with dynamic pre-charge is proposed. There is a storage unit having a sense line, a voltage amplifier for generating a first output signal depending on the sense line, a first current mirror for generating a first current depending on the first output signal, a second current mirror for generating a second current depending on a reference storage unit, and a pre-charge circuit for generating a charge up signal on the sense line to pre-charge the sense line to an operation current level depending on the first output signal, the second current and a clock pulse so as to directly detect a data in the storage unit during detecting the sense line.
    Type: Grant
    Filed: August 8, 2002
    Date of Patent: March 16, 2004
    Assignee: Winbond Electronics Corp.
    Inventor: Yeh Jun-Lin
  • Publication number: 20030235086
    Abstract: A floating gate memory architecture having current regulator is disclosed. A floating gate memory block have at least a programming voltage node for being programmed a plurality of bits according to the control of a plurality of bit lines. A high voltage source provides a regulated voltage when the plurality of bits are programmed in. A high voltage decoder locates between the floating gate memory block and the high voltage source for connecting the voltage to the programming voltage node according to the programming data of the floating gate memory block. A current regulator connects to the programming voltage node for keeping the programming voltage node in a constant voltage, and making a constant current flowing into said floating gate memory block according to said plurality of bits.
    Type: Application
    Filed: December 12, 2002
    Publication date: December 25, 2003
    Applicant: WINBOND ELECTRONICS CORP.
    Inventor: Yeh Jun Lin