Abstract: The present invention provides a two-dimensional double perovskite nanomaterial represented by the formula Cs2ABX6 or L4[Cs2ABX6]n-1ABX8, wherein A is a metal ion selected from Ag(I), Au(I), and Cu(I); B is a metal ion selected from In(III), Bi(III), Sb(III), Fe(III), and Tl(III); X is a halogen; L is a ligand; and n represents the number of metal-halide octahedral layers present in said nanomaterial. The invention further provides a light emitting material and electronic-, optic-, or optoelectronic device comprising said nanomaterial; as well as methods for the preparation of said nanomaterial.

Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA ??Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.

Abstract: A light converting nanoparticle represented by Chemical Formula 1, AXx??Chemical Formula 1 wherein, in Chemical Formula 1, A comprises an alkaline metal element, an alkaline-earth metal element, or a combination thereof, X comprises a halogen element, and x is 1 or 2 and is selected such that Chemical Formula 1 is electrically neutral, and a dopant substituted for a portion of A, wherein the dopant comprises Tl+, In+, Pb2+, Bi3+, Ag+, Cu+, Eu2+, Mn2+, or a combination thereof, wherein a content of the dopant is less than 15 mole percent, based on a total moles of A, wherein the light converting nanoparticle has a particle diameter of less than or equal to about 100 nanometers, and the light converting nanoparticle has a structure, cubic structure, an orthorhombic structure, a rhombic dodecahedron structure, or a combination thereof.

Abstract: A light converting nanoparticle represented by Chemical Formula 1, AXx ??Chemical Formula 1 wherein, in Chemical Formula 1, A comprises an alkaline metal element, an alkaline-earth metal element, or a combination thereof, X comprises a halogen element, and x is 1 or 2 and is selected such that Chemical Formula 1 is electrically neutral, and a dopant substituted for a portion of A, wherein the dopant comprises Tl+, In+, Pb2+, Bi3+, Ag+, Cu+, Eu2+, Mn2+, or a combination thereof, wherein a content of the dopant is less than 15 mole percent, based on a total moles of A, wherein the light converting nanoparticle has a particle diameter of less than or equal to about 100 nanometers, and the light converting nanoparticle has a structure, cubic structure, an orthorhombic structure, a rhombic dodecahedron structure, or a combination thereof.

Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA ??Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.

Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.

Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.