Abstract: A method of detecting a property of an energized gas in a process chamber involves providing a substrate having a hydride precursor in the chamber. The substrate is exposed to an energized gas comprising hydrogen in the chamber to form a hydride compound in the precursor layer. A sheet resistance of the layer is measured to determine the property of the energized gas, such as at least one of the processing uniformity and cleaning ability of the energized gas. One or more process parameters can be selected in relation to the measured sheet resistance to improve the energized gas processing uniformity and cleaning ability.

Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

Abstract: A structure and method which substantially reduce the number of run-in substrates that have to be used in a high temperature (550° C. or greater) processing environment is presented. A barrier to conductive heat transfer is provided between a process gas distribution faceplate and its process chamber support. This allows the gas distribution faceplate to thermally float and substantially reduces the temperature transients in the faceplate, which can cause thermal (temperature) transients when wafer processing is begun. The present configuration uses a thermal separation assembly to substantially block conductive heat transfer to the cold processing chamber, by using a Vespel gasket or stainless steel washers and thereby reduces the thermal gradient experienced by the gas distribution faceplate. As a result of the improved thermal uniformity, the number of run-in wafer that need to be used is reduced by 80 to 95%.

Abstract: The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 Å and, particularly greater than 1000 Å, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 Å was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 Å were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient.

Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.