Abstract: A method for combining power of separate directed energy beams each associated with a separate firing unit, on a common spot on target. The firing units are coordination and synchronization unit (FUSU) tracks a target and assigns a master firing unit and slave firing units. The master firing unit sends a guide beam to the target, forming a local coordinate system on said target, while the slave firing units track the target and track at least one spot of EM (electromagnetic) radiation on the target. The slave units calculate a direction vector, and fire a power beam at the target, together with the master unit.

Abstract: A device for directing a beam of radiation at a target. The device includes a fiber laser for producing the beam of radiation, an aiming mechanism, for aiming the beam of radiation at the target, that moves independently of the fiber laser, and an optical fiber for conveying the beam of radiation to the aiming mechanism.

Abstract: A device for directing a beam of radiation at a target. The device includes a fiber laser for producing the beam of radiation, an aiming mechanism, for aiming the beam of radiation at the target, that moves independently of the fiber laser, and an optical fiber for conveying the beam of radiation to the aiming mechanism.

Abstract: A process and a system for the complete stripping of the photoresist layer from semiconductor wafers after each processing step (lithography step) in a multi-step production process. At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal is also required after the final processing step. Up to 15 or more steps are needed in such wafer production process. According to the invention a high intensity pulsed laser beam sweeps the wafer surface as a narrow, preferably rectangular and strip the photoresist by sweeping the entire surface of the wafer. Pulse duration is generally shorter than 500 nano-sec (nsec) and preferably about 10 to 100 nsec, with much larger time intervals between pulses. The interaction of the beam with the photoresist ablates the photoresist. The ablation proceeds stepwise, each pulse ablating a certain area of the photoresist to a certian depth, and this without any damage to the processed wafer.