Patents by Inventor Ye Hwan Kim
Ye Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10741409Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.Type: GrantFiled: October 2, 2017Date of Patent: August 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo Jung Kim, Ye Hwan Kim, Ki Hoon Jang, Byoung Ho Kwon, Bo Un Yoon
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Patent number: 10236185Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.Type: GrantFiled: August 25, 2017Date of Patent: March 19, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Yool Kang, Kyoung-sil Park, Yun-seok Choi, Boo-deuk Kim, Ye-hwan Kim
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Patent number: 10047248Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.Type: GrantFiled: October 14, 2016Date of Patent: August 14, 2018Assignees: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hanyang UniversityInventors: Ye-hwan Kim, Un-gyu Paik, Ji-hoon Seo
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Publication number: 20180151362Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.Type: ApplicationFiled: August 25, 2017Publication date: May 31, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Yool KANG, Kyoung-sil Park, Yun-seok Choi, Boo-deuk Kim, Ye-hwan Kim
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Publication number: 20180130672Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.Type: ApplicationFiled: October 2, 2017Publication date: May 10, 2018Applicant: Samsung Electronics Co., Ltd .Inventors: Hyo Jung Kim, Ye Hwan Kim, Ki Hoon Jang, Byoung Ho Kwon, Bo Un Yoon
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Publication number: 20170107404Abstract: A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.Type: ApplicationFiled: October 14, 2016Publication date: April 20, 2017Applicants: Samsung Electronics Co., Ltd., Industry-University Cooperation Foundation Hanyang UniversityInventors: Ye-hwan KIM, Un-gyu PAIK, Ji-hoon SEO
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Patent number: 9343326Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.Type: GrantFiled: August 13, 2015Date of Patent: May 17, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-Jeong Kim, Sang-Kyun Kim, Kwang-Bok Kim, Ye-Hwan Kim, Jung-Sik Choi, Choong-Ho Han, Gi-Sik Hong
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Publication number: 20160086813Abstract: A method of fabricating a semiconductor device includes forming an active region in a semiconductor substrate, forming a plurality of dummy gates on the active region, the plurality of dummy gates having a gate mask disposed thereon, forming an interlayer insulating layer on the gate mask, and performing a one-time chemical mechanical polishing (CMP) process by using a slurry composition capable of polishing the interlayer insulating layer and the gate mask until top surfaces of the dummy gates are exposed.Type: ApplicationFiled: May 11, 2015Publication date: March 24, 2016Inventors: Ye-hwan KIM, Un-gyu PAIK, Ji-hoon SEO, Sang-kyun KIM, Jong-woo KIM, Dong-jun LEE
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Patent number: 9287132Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.Type: GrantFiled: March 5, 2015Date of Patent: March 15, 2016Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea-Gun Park, Un-Gyu Paik, Jin-Hyung Park, Hao Cui, Jong-Young Cho, Hee-Sub Hwang, Jae-Hyung Lim, Ye-Hwan Kim
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Publication number: 20150348798Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.Type: ApplicationFiled: August 13, 2015Publication date: December 3, 2015Inventors: Yun-Jeong KIM, Sang-Kyun Kim, Kwang-Bok Kim, Ye-Hwan Kim, Jung-Sik Choi, Choong-Ho Han, Gi-Sik Hong
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Publication number: 20150337173Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.Type: ApplicationFiled: August 4, 2015Publication date: November 26, 2015Inventors: Jea Gun PARK, Un Gyu PARK, Jin Hyung PARK, Hao CUI, Jong Young CHO, Hee Sub HWANG, Jae Hyung LIM, Ye Hwan KIM
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Publication number: 20150179470Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.Type: ApplicationFiled: March 5, 2015Publication date: June 25, 2015Inventors: Jea-Gun Park, Un-Gyu Paik, Jin-Hyung Park, Hao Cui, Jong-Young Cho, Hee-Sub Hwang, Jae-Hyung Lim, Ye-Hwan Kim
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Publication number: 20150021513Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.Type: ApplicationFiled: June 23, 2014Publication date: January 22, 2015Inventors: Yun-Jeong KIM, Sang-Kyun KIM, Kwang-Bok KIM, Ye-Hwan KIM, Jung-Sik CHOI, Choong-Ho HAN, Gi-Sik HONG
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Publication number: 20130112914Abstract: A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.Type: ApplicationFiled: September 14, 2012Publication date: May 9, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Choong-Ho HAN, Sang-Kyun KIM, Ye-Hwan KIM, Joon-Sang PARK, Jin-Woo BAE, Won-Jun LEE, Kyoung-Moon KANG, Jae-Dong LEE
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Publication number: 20130032572Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.Type: ApplicationFiled: February 1, 2011Publication date: February 7, 2013Applicant: IUCF-HYUInventors: Jea Gun Park, Un Gyu Paik, Jin Hyung Park, Hao Cui, Jong Young Cho, Hee Sub Hwang, Jae Hyung Lim, Ye Hwan Kim
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Publication number: 20120190201Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.Type: ApplicationFiled: July 9, 2010Publication date: July 26, 2012Inventors: Jea-Gun Park, Un-Gyu Paik, Jin-Hyung Park, Hao Cui, Jong-Young Cho, Hee-Sub Hwang, Jae-Hyung Lim, Ye-Hwan Kim
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Patent number: 8062547Abstract: A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.Type: GrantFiled: June 2, 2006Date of Patent: November 22, 2011Assignees: K.C. Tech Co., Ltd., IUCF-HYUInventors: Un Gyu Paik, Jea Gun Park, Sang Kyun Kim, Ye Hwan Kim, Myoung Won Suh, Dae Hyeong Kim
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Publication number: 20090275188Abstract: Disclosed is a slurry for polishing a phase change material. The slurry includes an abrasive, an alkaline polishing promoter and deionized water. Due to the use of the abrasive and the alkaline polishing promoter, the pH of the slurry is adjusted, the polishing rate of the phase change material is improved, and the polishing selectivity of the phase change material to an underlying insulating layer is increased. Further disclosed is a method for patterning a phase change material using the slurry.Type: ApplicationFiled: March 27, 2009Publication date: November 5, 2009Inventors: Jea Gun Park, Un Gyu Paik, Jin Hyung Park, Hee Sub Hwang, Hao Cui, Jong Young Cho, Woong Jun Hwang, Ye Hwan Kim