Patents by Inventor Yelena Sverdlov

Yelena Sverdlov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper molybdenum electroless deposition process and materials
    Patent number: 7169215
    Abstract: Materials and methods are described for electroless deposition of copper molybdenum. An aqueous bath composition for the electroless deposition of copper molybdenum includes; a soluble source of copper ions, a soluble source of molybdenum ions, and a reducing agent comprising boron, wherein the composition is adapted to electrolessly produce a copper molybdenum deposit.
    Type: Grant
    Filed: January 2, 2004
    Date of Patent: January 30, 2007
    Assignee: Ramot At Tel Aviv University Ltd.
    Inventors: Yossi Shacham-Diamand, Yelena Sverdlov
  • Copper molybdenum electroless deposition process and materials
    Publication number: 20050145133
    Abstract: Materials and methods are described for electroless deposition of copper molybdenum. An aqueous bath composition for the electroless deposition of copper molybdenum includes; a soluble source of copper ions, a soluble source of molybdenum ions, and a reducing agent comprising boron, wherein the composition is adapted to electrolessly produce a copper molybdenum deposit.
    Type: Application
    Filed: January 2, 2004
    Publication date: July 7, 2005
    Inventors: Yossi Shacham-Diamand, Yelena Sverdlov
  • Cobalt tungsten phosphorus electroless deposition process and materials
    Patent number: 6821324
    Abstract: Materials and methods are described for electroless deposition of cobalt phosphorus and cobalt tungsten phosphorus, employing tungsten trioxide or tungsten phosphoric acid as a source of tungsten. Electolessly deposited metals produced are substantially devoid of alkali metal ions and alkaline earth metal ions. The deposits are typically oxygen-free thin films having a low sheet resistivity of less than 50 &mgr;&OHgr;.cm. The films may be used as capping layers or barriers for the prevention of interlayer metallic drift, diffusion and migration in semiconductor, ULSI, VLSI, electroplating industries and products.
    Type: Grant
    Filed: June 19, 2002
    Date of Patent: November 23, 2004
    Assignee: Ramot At Tel-Aviv University Ltd.
    Inventors: Yosi Shacham-Diamand, Yelena Sverdlov
  • Cobalt tungsten phosphorus electroless deposition process and materials
    Publication number: 20030235658
    Abstract: Materials and methods are described for electroless deposition of cobalt phosphorus and cobalt tungsten phosphorus, employing tungsten trioxide or tungsten phosphoric acid as a source of tungsten.
    Type: Application
    Filed: June 19, 2002
    Publication date: December 25, 2003
    Applicant: RAMOT UNIVERSITY AUTHORITY FOR APPLIED RESEARCH & INDUSTRIAL DEVELOPMENT LTD.
    Inventors: Yosi Shacham-diamand, Yelena Sverdlov