Patents by Inventor Yen-Cheng HO

Yen-Cheng HO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11023015
    Abstract: An electronic device includes a first body, a second body pivoted to the first body and a magnetic force mechanism. The first body includes a driving portion. The second body includes a casing, a flexible display and a supporting mechanism movably disposed in the casing. The flexible display is attached to the supporting mechanism. The magnetic force mechanism includes a sliding rod slidably disposed at the casing, a first magnet, a second magnet and a third magnet. The first magnet is disposed at the sliding rod and faces the supporting mechanism. The second magnet and the third magnet are disposed at the supporting mechanism and face the sliding rod. The sliding rod has a driven end exposed from the casing and abuts against the driving portion. The first magnet is aligned with the second magnet or is aligned with the third magnet.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: June 1, 2021
    Assignee: Acer Incorporated
    Inventors: Chun-Hung Wen, Wei-Chih Wang, Chi-Tai Ho, Yu-Cheng Shih, Hui-Ping Sun, Chun-Hsien Chen, Kuan-Lin Chen, Chih-Heng Tsou, Yen-Chou Chueh
  • Publication number: 20210149453
    Abstract: An electronic device includes a first body, a second body pivoted to the first body and a magnetic force mechanism. The first body includes a driving portion. The second body includes a casing, a flexible display and a supporting mechanism movably disposed in the casing. The flexible display is attached to the supporting mechanism. The magnetic force mechanism includes a sliding rod slidably disposed at the casing, a first magnet, a second magnet and a third magnet. The first magnet is disposed at the sliding rod and faces the supporting mechanism. The second magnet and the third magnet are disposed at the supporting mechanism and face the sliding rod. The sliding rod has a driven end exposed from the casing and abuts against the driving portion. The first magnet is aligned with the second magnet or is aligned with the third magnet.
    Type: Application
    Filed: April 22, 2020
    Publication date: May 20, 2021
    Applicant: Acer Incorporated
    Inventors: Chun-Hung Wen, Wei-Chih Wang, Chi-Tai Ho, Yu-Cheng Shih, Hui-Ping Sun, Chun-Hsien Chen, Kuan-Lin Chen, Chih-Heng Tsou, Yen-Chou Chueh
  • Publication number: 20210055646
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 25, 2021
    Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
  • Patent number: 10816892
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: October 27, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-CHeng Ho, Chen-Shao Hsu
  • Publication number: 20190155140
    Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
    Type: Application
    Filed: April 30, 2018
    Publication date: May 23, 2019
    Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Yen-Cheng HO, Chih-Cheng LIN, Chia-Jen CHEN
  • Publication number: 20190148110
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Application
    Filed: April 30, 2018
    Publication date: May 16, 2019
    Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU