Patents by Inventor Yen-Cheng Hu

Yen-Cheng Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9178086
    Abstract: A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: November 3, 2015
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20150243806
    Abstract: A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
    Type: Application
    Filed: September 5, 2014
    Publication date: August 27, 2015
    Inventors: Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Patent number: 8952244
    Abstract: A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: February 10, 2015
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Peng Chen, Shuo-Wei Liang, Zhen-Cheng Wu
  • Publication number: 20140295612
    Abstract: A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
    Type: Application
    Filed: June 13, 2014
    Publication date: October 2, 2014
    Inventors: Cheng-Chang Kuo, Yen-Cheng Hu, Hsin-Feng Lee, Tsung-Pao Chen, Jen-Chieh Chen, Zhen-Cheng Wu
  • Patent number: 8835753
    Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: September 16, 2014
    Assignee: AU Optronics Corp.
    Inventors: Yen-Cheng Hu, Hsin-Feng Li, Zhen-Cheng Wu
  • Publication number: 20140238475
    Abstract: A solar cell includes a base having a first surface and a second surface opposite to the first surface, a lightly-doped region disposed on the first surface of the base, a semiconductor layer disposed on the lightly-doped region, a first electrode disposed on the first surface of the base, and a second electrode disposed on the second surface of the base. The lightly-doped region has a doping type opposite to the doping type of the base. The bottom of the first electrode is substantially aligned with the interface between the first surface of the base and the lightly-doped region.
    Type: Application
    Filed: February 24, 2014
    Publication date: August 28, 2014
    Applicant: AU Optronics Corp.
    Inventor: Yen-Cheng Hu
  • Publication number: 20140230879
    Abstract: A photovoltaic module includes at least two photovoltaic cells and a ribbon. Each of the photovoltaic cells includes a photovoltaic device, a surface electrode, and a back electrode. The photovoltaic device has a light-receiving surface and a back surface opposite the light-receiving surface. The surface electrode is disposed on the light-receiving surface of the photovoltaic device. The surface electrode includes at least one bus electrode and a plurality of finger electrodes. The bus electrode includes at least two line electrodes disposed on the light-receiving surface of the photovoltaic device. The finger electrodes are disposed on the light-receiving surface of the photovoltaic device and extend in a direction different from the lengthwise direction of the bus electrode. The back electrode is disposed on the back surface of the photovoltaic device. The ribbon electrically connects to the photovoltaic cells.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 21, 2014
    Applicant: AU Optronics Corporation
    Inventor: Yen-Cheng HU
  • Patent number: 8779281
    Abstract: A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: July 15, 2014
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Peng Chen, Tsung-Pao Chen, Shuo-Wei Liang, Zhen-Cheng Wu, Chien-Jen Chen
  • Publication number: 20140048129
    Abstract: A solar cell includes a substrate. The substrate has a light-receiving surface and a back surface opposite to the light-receiving surface. The substrate includes plural trenches formed on the back surface. The solar cell includes plural n-type diffusion areas and plural p-type diffusion areas alternately disposed on the back surface and the surface of the trenches. The possibility of recombination of the electron-hole pair while moving can be reduced because of the trenches, which are formed in the substrate.
    Type: Application
    Filed: March 11, 2013
    Publication date: February 20, 2014
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Tsung-Pao CHEN, Shih-Hsien YANG, Yu-Chun CHEN, Ming-Hui CHIU, Yi-Hsuan LIN, Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Publication number: 20140007918
    Abstract: A photovoltaic device provided in the present disclosure includes a superstrate, a lower substrate, a plurality of photovoltaic cells and a package structure. The superstrate is light-transmissive, and arranged in parallel with the substrate. The photovoltaic cells are disposed side-by-side at intervals with each other between the superstrate and the substrate, and a gap zone is defined by two facing lateral surfaces of every two of the neighboring photovoltaic cells. The package structure is sandwiched between the superstrate and the substrate, and encapsulates the photovoltaic cells between the superstrate and the substrate in which a reflection portion is provided in the package structure, and located in the gap zone for reflecting lights from the superstrate back to the photovoltaic cells.
    Type: Application
    Filed: February 22, 2013
    Publication date: January 9, 2014
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Wei-Jieh LEE, Kuan-Wen TUNG, Chun-Ming YANG, Huang-Chi TSENG, Chiuan-Ting LI, Wei-Sheng SU, Yen-Cheng HU
  • Publication number: 20130312820
    Abstract: A solar cell includes a semiconductor substrate and a first antireflective layer. The semiconductor substrate has a first-type semiconductor surface and a second-type semiconductor surface opposite to each other. The first antireflective layer includes a plurality of refraction convexes and a coverage layer. The refraction convexes are formed on the second-type semiconductor surface. Each refraction convex includes a first refraction part and a second refraction part. The first refraction parts are conformally coated with the respective second refraction parts, and the first refraction part is configured to have a refractive index greater than the refractive index of the second refraction part. The coverage layer is formed to cover the second-type semiconductor surface and the refraction convexes, and the coverage layer is configured to have a refractive index smaller than the refractive index of the second refraction part. A solar cell manufacturing method is also provided.
    Type: Application
    Filed: September 4, 2012
    Publication date: November 28, 2013
    Applicant: AU OPTRONICS CORP.
    Inventors: Yen-Cheng HU, Wei-Shuo Ho, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20130167919
    Abstract: Disclosed herein is a solar cell, which includes a first electrode, a buried electrode, a photoelectric conversion layer and a second electrode. The buried electrode is disposed on the first electrode. The photoelectric conversion layer is disposed over the first electrode and the buried electrode. The buried electrode is embedded in the photoelectric conversion layer. The second electrode is arranged in a way such that the photoelectric conversion layer is positioned between the first electrode and the second electrode.
    Type: Application
    Filed: April 27, 2012
    Publication date: July 4, 2013
    Applicant: AU Optronics Corporation
    Inventors: Liang-Hsing LAI, Yen-Cheng HU, Jen-Chieh CHEN, Zhen-Cheng WU
  • Patent number: 8338217
    Abstract: A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: December 25, 2012
    Assignee: Au Optronics Corporation
    Inventors: Yen-Cheng Hu, Cheng-Chang Kuo, Jun-Wei Chen, Hsin-Feng Li, Jen-Chieh Chen, Zhen-Cheng Wu
  • Patent number: 8334163
    Abstract: A method of forming solar cell includes forming a doping paste on a first surface of a semiconductor substrate to form a selective emitter, to render the selective emitter a non-textured surface, and forming a texturing barrier layer on a second surface of the semiconductor substrate to render the second surface a non-textured surface.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: December 18, 2012
    Assignee: AU Optronics Corp.
    Inventors: Yen-Cheng Hu, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20120264253
    Abstract: A method of fabricating a solar cell is provided. A first type substrate having a first surface and a second surface is provided. A first doping process is performed on the first surface of the first type substrate by using a first dopant, so as to form a first type lightly doped layer. A second doping process is performed on a portion of the first type lightly doped layer by using a second dopant, so as to form a second type heavily doped region. A molecular weight of the second dopant is larger than a molecular weight of the first dopant, and a temperature of the first doping process is higher than a temperature of the second doping process. A first electrode is formed on the second type heavily doped region. A second electrode is formed on the second surface of the first type substrate.
    Type: Application
    Filed: July 26, 2011
    Publication date: October 18, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Ming-Hui Chiu, Shih-Hsien Yang, Yen-Cheng Hu, Yu-Chun Chen, Tsung-Pao Chen, Kuan-Chen Wang, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20120167973
    Abstract: A solar cell includes a semiconductor substrate, a doping layer, a quantum well layer, a first passivation layer, a second passivation layer, a first electrode and a second electrode. The semiconductor substrate has a front surface and a back surface, and the front surface of the semiconductor substrate includes nano-rods. The doping layer covers the surface of the nano-rods. The electrode layers cover the doping layer. The quantum well layer having at least one first doping region and at least one second doping region is disposed on the semiconductor substrate. The quantum well layer includes polycrystalline silicon germanium (Si1-xGex). The first passivation layer and the second passivation layer cover the first and the second doping regions of the quantum well layer, respectively. The first electrode and the second electrode are electrically connected to the first doping region and the second doping region of the quantum well layer, respectively.
    Type: Application
    Filed: April 19, 2011
    Publication date: July 5, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Peng Chen, Shuo-Wei Liang, Zhen-Cheng Wu
  • Publication number: 20120167966
    Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
    Type: Application
    Filed: May 5, 2011
    Publication date: July 5, 2012
    Inventors: Yen-Cheng Hu, Hsin-Feng Li, Zhen-Cheng Wu
  • Publication number: 20120171805
    Abstract: A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
    Type: Application
    Filed: March 16, 2011
    Publication date: July 5, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Cheng-Chang Kuo, Jun-Wei Chen, Hsin-Feng Li, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20120138127
    Abstract: A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
    Type: Application
    Filed: March 2, 2011
    Publication date: June 7, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Cheng-Chang Kuo, Yen-Cheng Hu, Hsin-Feng Li, Tsung-Pao Chen, Jen-Chieh Chen, Zhen-Cheng Wu
  • Publication number: 20120097236
    Abstract: A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
    Type: Application
    Filed: May 4, 2011
    Publication date: April 26, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Yen-Cheng Hu, Peng Chen, Tsung-Pao Chen, Shuo-Wei Liang, Zhen-Cheng Wu, Chien-Jen Chen