Abstract: A light emitting device includes a window and a collimating component over a light emitting pixel. A light reflection performance of the light emitting pixel to an incoming ambient light is configured by the window to be appeared to have at least two regions, wherein one region of the at least two regions has a smaller transmittance to the incoming ambient light than the other, the light emitting pixel includes a plurality of sub-pixels separated with a space, and the space is smaller than a resolution of a human eye.

Abstract: A display panel includes a substrate, an insulating layer, a light emitting device and a protecting layer. The substrate includes a light emitting region and a light transmitting region. The insulating layer is disposed over the substrate. The light emitting device is disposed in the light emitting region, wherein the light emitting device includes a first electrode over the substrate, a light emitting layer over the first electrode, and a second electrode over the light emitting layer. The second electrode is substantially vertically aligned with the light emitting device, and the light transmitting region is uncovered by the second electrode. The protecting layer covers the light emitting device and the insulating layer.

Abstract: A light emitting panel includes a substrate, a plurality of light emitting devices disposed on the substrate, a protecting layer disposed on plurality of the light emitting devices, and an optical membrane disposed on the substrate. The plurality of light emitting devices include a first light emitting device configured to emit a first light beam, and a second light emitting device configured to emit a second light beam different from the first light beam in wavelengths. The optical membrane is substantially aligned with the first emitting device, and configured to modify an intensity of the first light beam output from the optical membrane with respect to an intensity of the first light beam output from the first light emitting device.

Abstract: A light emitting device includes a window and a collimating component over a light emitting pixel. A light reflection performance of the light emitting pixel to an incoming ambient light is configured by the window to be appeared to have at least two regions, wherein one region of the at least two regions has a smaller transmittance to the incoming ambient light than the other, the light emitting pixel includes a plurality of sub-pixels separated with a space, and the space is smaller than a resolution of a human eye.

Abstract: A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip. The light absorption substrate has a side forming a bubble structure at an interface with the packaging glue. A reflecting layer is formed from material refractivity difference of the packaging glue, the bubble structure and the light absorption substrate for eliminating or reducing light absorption by the substrate.

Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Abstract: A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip. The light absorption substrate has a side forming a bubble structure at an interface with the packaging glue. A reflecting layer is formed from material refractivity difference of the packaging glue, the bubble structure and the light absorption substrate for eliminating or reducing light absorption by the substrate.

Abstract: A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip, wherein the packaging structure also comprises a baffle that surrounds the outer side wall of the light absorption substrate. Adding of a baffle structure in the support system of the packaging structure can effectively prevent light from being absorbed by the light absorption substrate and reflect such light out of the packaging structure, thus increasing probability of light emitting and improving light intensity of the vertical LED chip.

Abstract: A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip, wherein the packaging structure also comprises a baffle that surrounds the outer side wall of the light absorption substrate. Adding of a baffle structure in the support system of the packaging structure can effectively prevent light from being absorbed by the light absorption substrate and reflect such light out of the packaging structure, thus increasing probability of light emitting and improving light intensity of the vertical LED chip.

Abstract: A LED with local passivation layers comprises a substrate, a light-emitting stack layer formed on the substrate, an electrode group formed on the light-emitting stack layer, and a first passivation layer formed on a side wall of the light-emitting stack layer. The light-emitting stack layer at least includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. The electrode group includes an n-type electrode and a p-type electrode. The n-type semiconductor layer has an exposed area where the n-type electrode is formed. The first passivation layer is distributed on a side wall of the light-emitting stack layer, which neighbors the exposed area, to protect the PN junction that is between the n-type semiconductor layer and the p-type semiconductor layer and is on the abovementioned side wall.

Abstract: A light emitting diode (LED) chip includes a substrate, a light emitting semiconductor device, a first electrode, and a second electrode. The light emitting semiconductor device has a recess and includes a first portion and a second portion. The first portion is disposed on the substrate and located between the second portion and the substrate. The recess penetrates the second portion and exposes an exposed region of the first portion. The transverse sectional area of the first portion and the transverse sectional area of the second portion increase along a direction away from the substrate. The first electrode is disposed on the exposed region of the first portion and electrically connected to the first portion. The second electrode is disposed on and electrically connected to the second portion.