Abstract: A drug conjugate includes a structure shown by the following formula: Z-(linker-[R]m)n. In the formula, Z is a drug compound, R is a sugar, and m and n are independently an integer from 1 to 6. The drug compound Z is a hepatitis virus targeting drug, a hepatitis B virus (HBV) drug, an inhibitor of apoptosis protein (IAP) antagonist, a multidrug resistance (MDR) inhibitor, or analogues, precursors, prodrugs, derivatives thereof.

Abstract: The present invention relates to a basalt fiber reinforced concrete, which includes: a cement slurry with a water-to-cement ratio between 0.3 and 0.5, and a slurry volume percentage between 15-25%; an aggregate with an aggregate volume percentage between 65% and 75%; a basalt fiber reinforcement with a fiber volume percentage between 0.2% and 1.00%; and a concrete admixture used to adjust the properties of the basalt fiber reinforced concrete.

Abstract: The present invention relates to a basalt fiber reinforced asphalt concrete, which includes: an asphalt material with a penetration grade between 40-300 at room temperature, selected from one of an asphalt mortar, an oil-soluble asphalt, an emulsified asphalt, and a modified asphalt; an aggregate having a first volume percentage between 50-80%; a basalt fiber reinforcement with a second volume percentage between 0.1-0.9%; and a chemical admixture for asphalt concrete used to adjust the properties of the basalt fiber reinforced asphalt concrete.

Abstract: A method includes forming a p-well and an n-well in a substrate. The method further includes forming a stack of interleaving first semiconductor layers and second semiconductor layers over the p-well and the n-well, the first semiconductor layers having a first thickness and the second semiconductor layers having a second thickness different than the first thickness. The method further includes annealing the stack of interleaving semiconductor layers. The method further includes patterning the stack to form fin-shaped structures including a first fin-shaped structure over the n-well and a second fin-shaped structure over the p-well. The method further includes etching to remove the second semiconductor layers from the first and second fin-shaped structures, where the first semiconductor layers have a different thickness within each of the first and second fin-shaped structures after the etching. The method further includes forming a metal gate over the first and second fin-shaped structures.

Abstract: A driving circuit includes a first driving signal generator, a first voltage conversion circuit and a first switch. The first driving signal generator generates a first driving signal according a first input signal, wherein the first driving signal is a pulse width modulated signal. The first voltage conversion circuit is coupled between the first driving signal generator and a control terminal of a first power transistor, converts the first driving signal to an output driving signal by charges a capacitor and discharges the capacitor, wherein the output driving signal is output to the control terminal of the first power transistor. The first switch is couple with the first power transistor in series, and is controlled by a control signal to be turned-on or cut-off.

Abstract: A valve for a tire with a simple structure and a low cost is easily made for monitoring the pressure of the tire through an indicator.

Abstract: A valve for a tire with a simple structure and a low cost is easily made for monitoring the pressure of the tire through an indicator.