Abstract: An electronic device and a method for training or applying a neural network model are provided. The method includes the following steps. An input data is received. Convolution is performed on the input data to generate a high-frequency feature map and a low-frequency feature map. One of upsampling and downsampling is performed to match a first size of the high-frequency feature map and a second size of the low-frequency feature map. The high-frequency feature map and the low-frequency feature map are concatenated to generate a concatenated data. The concatenated data is inputted to an output layer of the neural network model.

Abstract: An electronic device and a method for spectral model explanation are provided. The method includes: obtaining first labeled spectral data; storing a plurality of pipelines, selecting a selected pipeline from the pipelines, and generating a first measurement result corresponding to the first labeled spectral data according to the selected pipeline; and determining an important wavelength range corresponding to the selected pipeline according to the first measurement result.

Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a dummy gate structure over a substrate. The dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode layer. Sidewall spacers including one or more layers of insulating materials are formed on sidewalls of the dummy gate structure. A silicon based liner is formed over the sidewall spacers. A first insulating layer is formed over the silicon based liner. The silicon based liner and the first insulating layer are thermally treating causing a reduction in a volume of the first insulating layer and an increase in a volume of the silicon based liner. The dummy gate structure is removed to form a gate space in the first insulating layer. The gate space is formed with a high-k dielectric layer and a first conductive layer.

Abstract: The present invention provides a method for OSA (Obstructive Sleep Apnea) severity classification by using recording-based Peripheral Oxygen Saturation Signal. The major feature of the present invention emphasizes on using a recording-based Peripheral Oxygen Saturation Signal (SpO2 signal) as an input, which is different from the deep learning-based prior art of using segment-based signals as an input to a model, and the segment-based signals has only two classification results, i.e. normal or apnea.

Abstract: The present invention provides a method for OSA (Obstructive Sleep Apnea) severity detection using recording-based electrocardiography (ECG) Signal. The major feature of the present invention emphasizes on using a recording-based ECG Signal as an input, which is different from the deep learning-based prior art of using segment-based signals as an input to a model, and the segment-based signals has only two classification results, i.e. normal or apnea. The present invention provides a method for a model to detect and output directly a value of apnea-hypopnea index (AHI) for the OSA Severity.

Abstract: A method includes depositing a first dielectric layer in an opening, the first dielectric layer comprising a semiconductor element and a non-semiconductor element. The method further includes depositing a semiconductor layer on the first dielectric layer, the semiconductor layer comprising a first element that is the same as the semiconductor element. The method further includes introducing a second element to the semiconductor layer wherein the second element is the same as the non-semiconductor element. The method further includes applying a thermal annealing process to the semiconductor layer to change the semiconductor layer into a second dielectric layer.

Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Abstract: The present invention provides a caption service system for remote speech recognition, which provides caption service for the hearing impaired. This system includes a speaker and a live broadcast equipment at A, a listener-typist and a computer at B, a hearing impaired and a live screen at C, and an automatic speech recognition (ASR) caption server at D. Connect the live broadcast equipment, the computer, the live screen and the ASR caption server with a network. The speaker's audio is sent to the automatic speech recognition (ASR) caption server to be converted into text, which is corrected by the listener-typist, and then the text caption is sent to the live screen of the hearing impaired together with the speaker's video and audio, so that the hearing impaired can see the text caption spoken by the speaker.

Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: The present invention provides a speech recognition system for teaching assistance, which provides caption service for the hearing impaired. This system includes a speaker and a automatic speech recognition (ASR) classroom server, a listener-typist and a computer, a hearing impaired and a live screen, all are in the same classroom. Connect the ASR classroom server, the computer and the live screen with a local area network. The speaker's audio is sent to the ASR classroom server by a microphone for being converted into text caption, and then the text caption is sent to the live screen of the hearing impaired together with the speaker's audio so that the hearing impaired can read the text caption spoken by the speaker. The text caption can be corrected by the listener-typist to make it completely correct.

Abstract: The present invention provides a caption service system for remote speech recognition, which provides caption service for the hearing impaired. This system includes a speaker and a live broadcast equipment at A, a listener-typist and a computer at B, a hearing impaired and a live screen at C, and an automatic speech recognition (ASR) caption server at D. Connect the live broadcast equipment, the computer, the live screen and the ASR caption server with a network. The speaker's audio is sent to the automatic speech recognition (ASR) caption server to be converted into text, which is corrected by the listener-typist, and then the text caption is sent to the live screen of the hearing impaired together with the speaker's video and audio, so that the hearing impaired can see the text caption spoken by the speaker.

Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin spacer alongside a fin structure, a source/drain structure over the fin structure, and a salicide layer along a surface of the source/drain structure. A bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a capping layer over the salicide layer. A portion of the capping layer directly below the bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a dielectric layer over the capping layer. The dielectric layer is made of a different material than the capping layer.

Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.

Abstract: The invention provides a method of generating an image recognition model and an electronic device using the method. The method includes the following. A source image is obtained; a first image is cut out of a first region of the source image to generate a cut source image; a preliminary image recognition model is pre-trained according to feature data and label data, in which the feature data is associated with the cut source image, and the label data is associated with the first image; and the pre-trained preliminary image recognition model is fine-tuned to generate the image recognition model. The method of generating the image recognition model and the electronic device provided by the invention may correctly restore an input image.