Abstract: The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure.

Abstract: A memory control method, a memory storage device and a memory control circuit unit are disclosed. The method includes: detecting a state of the memory storage device; and adjusting an operation mode of the memory storage device according to the state of the memory storage device, wherein the operation mode includes a first operation mode and a second operation mode, and a first waiting time before the memory storage device entering a power saving mode in the first operation mode is longer than a second waiting time before the memory storage device entering the power saving mode in the second operation mode.

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Abstract: The present invention provides a light emitting diode, which includes a substrate, a first intermediary layer and a two-dimensional material structure. The first intermediary layer is located on the substrate. The two-dimensional material structure is located on the first intermediary layer, and the two-dimensional material structure is formed by stacking a plurality of two-dimensional material layers. The number of the plurality of two-dimensional material layers is not less than 2. The light with a specific wavelength is emitted or absorbed by the two-dimensional material structure.

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Abstract: The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a gallium nitride layer, a two-dimensional material structure, a covering layer, a drain, a source and a gate. The buffer layer is located on the substrate. The gallium nitride layer is located on the buffer layer and forms a channel layer. The two-dimensional material structure is located on the channel layer. The covering layer partially covers the two-dimensional material structure. The drain and the source are arranged on the two-dimensional material structure, and the gate is arranged on the covering layer.

Abstract: The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a channel layer, a first semiconductor epitaxial structure, a second semiconductor epitaxial structure, a drain, a source and a gate. The first semiconductor epitaxial structure is located on the channel layer and sequentially includes a first aluminum gallium nitride layer, a supply layer and a second aluminum gallium nitride layer, and the first semiconductor epitaxial structure is formed with a hollow part extending from a top surface of the second aluminum gallium nitride layer toward the channel layer. The second semiconductor epitaxial structure is located in the hollow part and sequentially includes an aluminum gallium nitride layer and a P-type gallium nitride layer. The drain and the source are respectively arranged on the second aluminum gallium nitride layer, and the gate is arranged on the P-type gallium nitride layer.

Abstract: The present disclosure provides a structure of an ultraviolet light sensing-enhanced photodiode. The main structure of the photodiode includes a silicon photodiode and an infrared conversion layer formed on a surface that receives an ultraviolet light of the of the silicon photodiode. When the ultraviolet light irradiates on the ultraviolet light sensing-enhanced photodiode through the infrared conversion layer, the infrared conversion layer converts the ultraviolet light into an infrared light. The first portion of the infrared light is propagated to the silicon photodiode and then converted to a photoelectric current. The second portion of the infrared light is absorbed by the infrared conversion layer. An infrared reflection layer is also provided for reflecting the third portion of the infrared light that is originally escaped from the infrared reflection layer, and the third portion of the infrared light can be reflected into the silicon photodiode.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Abstract: A light-emitting element including an epitaxial structure and a light guide structure is provided. The epitaxial structure has a first surface and a second surface opposite to each other and includes an active layer. The light guide structure is disposed on the first surface of the epitaxial structure and includes a first light reflection layer and a filter layer covering on an upper surface of the first light reflection layer. The first light reflection layer completely covers the first surface. A display panel is also provided.

Abstract: A micro semiconductor device, including a semiconductor structure, a current confinement layer, a first type electrode, and a second type electrode, is provided. The current confinement layer is disposed in the semiconductor structure. The current confinement layer includes an oxidized area and a non-oxidized area. The first type electrode and the second type electrode are both disposed on the current confinement layer. An orthographic projection of a part of the oxidized area on a bottom surface of the semiconductor structure away from the first type electrode and the second type electrode is located between an orthographic projection of the first type electrode on the bottom surface and an orthographic projection of the second type electrode on the bottom surface.

Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Abstract: The present invention discloses a micro LED structure including a first semiconductor layer, a first electrode, a second electrode, and an active layer. The first semiconductor layer has two opposite sides defined as a first surface and a second surface. The first semiconductor layer has a doped region located therein and exposed on the first surface. A pn junction is formed between the doped region and the first semiconductor layer. The first electrode and the second electrode, located on the first surface, are capable of electrically connecting to the first semiconductor layer and the doped region respectively. The active layer is adjacent to the second surface. Wherein the first semiconductor layer is a first doping type, and the doped region is a second doping type different from the first doping type, and the first semiconductor layer and the pn junction are located at identical side of the active layer.

Abstract: The present invention discloses a micro LED structure including a first semiconductor layer, a first electrode, a second electrode, and an active layer. The first semiconductor layer has two opposite sides defined as a first surface and a second surface. The first semiconductor layer has a doped region located therein and exposed on the first surface. A pn junction is formed between the doped region and the first semiconductor layer. The first electrode and the second electrode, located on the first surface, are capable of electrically connecting to the first semiconductor layer and the doped region respectively. The active layer is adjacent to the second surface. Wherein the first semiconductor layer is a first doping type, and the doped region is a second doping type different from the first doping type, and the first semiconductor layer and the pn junction are located at identical side of the active layer.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.