Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.

Abstract: A method and a system for stacking printed circuit boards includes providing a lower baseboard, a pinboard, and an upper baseboard; printing a first solder paste on the lower baseboard; placing a placement component on the lower baseboard; placing the pinboard on the lower baseboard; reflow soldering the lower baseboard with the placement component and the pinboard and forming a first assembly; printing the first solder paste and a second solder paste on the upper baseboard; placing the placement component on the upper baseboard and the first assembly on the upper baseboard; and reflow soldering the upper baseboard with the placement component and the first assembly and forming a printed circuit board; a melting point of the first solder paste is higher than a melting point of the second solder paste.

Abstract: An electrical stimulation device is provided. The electrical stimulation device includes a boost circuit, a voltage selecting circuit and a control circuit. The boost circuit generates a plurality of voltages, wherein the voltages have different voltage values. The voltage selecting circuit is coupled to the boost circuit and selects one voltage according to a reference voltage on a tissue impedance to generate an output voltage. The control circuit is coupled to the boost circuit and in response to electrical stimulation; it transmits a control signal to enable the boost circuit.

Abstract: An output stage circuit comprises: a power inverter, coupled to a signal terminal; and a dynamic bias circuit, wherein the dynamic bias circuit connects between a system voltage terminal and the power inverter. The dynamic bias circuit comprises at least one Zener diode, which is configured to maintain a voltage difference between a gate terminal and a source terminal of at least one transistor of the power inverter within a first absolute value; which is configured to maintain a voltage difference between the gate terminal and a drain terminal of the at least one transistor within a second absolute value; and configured to maintain a voltage difference between the drain terminal and the source terminal of the at least one transistor within the second absolute value.

Abstract: An output stage circuit comprises: a power inverter, coupled to a signal terminal; and a dynamic bias circuit, wherein the dynamic bias circuit connects between a system voltage terminal and the power inverter. The dynamic bias circuit comprises at least one Zener diode, which is configured to maintain a voltage difference between a gate terminal and a source terminal of at least one transistor of the power inverter within a first absolute value; which is configured to maintain a voltage difference between the gate terminal and a drain terminal of the at least one transistor within a second absolute value; and configured to maintain a voltage difference between the drain terminal and the source terminal of the at least one transistor within the second absolute value.