Abstract: An OLED apparatus has an OLED driver for receiving display data from a processor. The processor gets OLED status information indicating attenuation or other status of OLED cells or related circuits. The processor calculates adjustment data according to the OLED status information and sends the adjustment data to the OLED driver. The OLED driver drives the OLED cells based on the adjustment data to overcome attenuation and other related problems.

Abstract: A method of frame rate conversion includes receiving multiple input frames including a previous frame, a current frame and a next frame. A changing trend between the current frame and the previous frame is calculated. The current frame is used for generating one or more than one inserting frame according to the changing trend. The inserting frame is output after outputting the current frame to achieve frame conversion.

Abstract: A method of frame rate conversion includes receiving multiple input frames including a previous frame, a current frame and a next frame. A changing trend between the current frame and the previous frame is calculated. The current frame is used for generating one or more than one inserting frame according to the changing trend. The inserting frame is output after outputting the current frame to achieve frame conversion.

Abstract: A method and an apparatus for processing an image are provided. A buffer is provided and separated into a series of storage units. Each storage unit has a fixed size. The image is divided into pixel groups, and each pixel group corresponds to one storage unit. Each pixel group is compressed by one of candidate compression methods to obtain compressed data so that the compressed data of each pixel group fits the corresponding storage unit.

Abstract: A method and an apparatus for processing an image are provided. A buffer is provided and separated into a series of storage units. Each storage unit has a fixed size. The image is divided into pixel groups, and each pixel group corresponds to one storage unit. Each pixel group is compressed by one of candidate compression methods to obtain compressed data so that the compressed data of each pixel group fits the corresponding storage unit.

Abstract: A method of compressing an image is provided by saving compressed color components into temporary buffers. In different time slots, compressed color components are stored in different temporary buffer. When data in the temporary buffers reach a predetermined size, data are moved to a second buffer larger than the temporary buffers. When the second buffer stores a predetermined amount of data, data are moved to an external memory.

Abstract: A method and an apparatus for processing an image are provided. A buffer is provided and separated into a series of storage units. Each storage unit has a fixed size. The image is divided into pixel groups, and each pixel group corresponds to one storage unit. Each pixel group is compressed by one of candidate compression methods to obtain compressed data so that the compressed data of each pixel group fits the corresponding storage unit.

Abstract: A method and an apparatus for processing an image are provided. A buffer is provided and separated into a series of storage units. Each storage unit has a fixed size. The image is divided into pixel groups, and each pixel group corresponds to one storage unit. Each pixel group is compressed by one of candidate compression methods to obtain compressed data so that the compressed data of each pixel group fits the corresponding storage unit.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A method of compressing an image by saving the compressed color components into multiple temporary buffers with each time slot saving the color component to the different buffer. The difference between the input data and the output data.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: A phase-change memory is provided. The phase-change memory comprises first and second electrodes, wherein the first and second electrodes comprise phase-change material. A conductive path is formed between the first and second electrodes and electrically connects the first and second electrodes, wherein the conductive path comprises an embedded metal layer and a phase-change layer resulting in current from the first electrode to the second electrode or from the second electrode to the first electrode passing through the embedded metal layer and the phase change layer.