Abstract: The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.

Abstract: A wafer carrier. The wafer carrier includes a container and a plate, wherein the container has an inner wall and the plate is disposed in the vicinity of the inner wall of an upper portion of the container.

Abstract: The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.

Abstract: A method of fabricating a stabilized TiN control wafer comprising the following steps. A silicon substrate is provided having a silicon oxide layer formed thereover. An initial TiN layer is formed over the silicon oxide layer. The silicon substrate is placed in an atmosphere having ambient oxygen for from about 22 to 26 hours to form a rested TiN layer. The rested TiN layer is heated at a temperature of from about 115 to 125° C. for from about 85 to 95 seconds to form a heat treated TiN layer, whereby the heat treated TiN layer is stabilized to form the stabilized TiN control wafer.

Abstract: A method of fabricating a stabilized TiN control wafer comprising the following steps. A silicon substrate is provided having a silicon oxide layer formed thereover. An initial TiN layer is formed over the silicon oxide layer. The silicon substrate is placed in an atmosphere having ambient oxygen for from about 22 to 26 hours to form a rested TiN layer. The rested TiN layer is heated at a temperature of from about 115 to 125° C. for from about 85 to 95 seconds to form a heat treated TiN layer, whereby the heat treated TiN layer is stabilized to form the stabilized TiN control wafer.

Abstract: The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm).