Abstract: A memory device for CIM has a memory array including a plurality of memory cells arranged in an array of rows and columns. The memory cells have a first group of memory cells and a second group of memory cells. Each row of the array has a corresponding word line, with each memory cell of a row of the array coupled to the corresponding word line. Each column of the array has a corresponding bit line, with each memory cell of a column of the array coupled to the corresponding bit line. A control circuit is configured to select the first group of memory cells or the second group of memory cells in response to a group enable signal.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: The present invention relates to a method for calculating the change of signals starting from the originally detected temporal signals (_102 ), comprising the following steps: (a) eliminating the drift in the originally detected temporal signals with time to get ?i signals; (b) removing the xi signals existing outside the range of 80% to 120% of the averaged value of all the ?i signals to get residual signals as x 2 signals; (c) dividing the ?2 signals into 14-100 sections; (d) finding the averaged value of the ?2 signals in each section to get ?3 signals; (e) optionally neglecting one or two of the first ?3 signals and selecting six to nine ?3 signals with the smallest value of standard deviation in initial sections, wherein the initial sections are the first one-fourth part to half part of all sections; (f) eliminating the drift in the selected ?3 signals of step (e) with time to get ?4 signals; (g) selecting six to nine ?3 signals with the smallest value of standard deviation in terminal sections, wherein