Patents by Inventor Yen-Hao LIAO

Yen-Hao LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118178
    Abstract: A staining kit is provided, including a first pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, CD8, CD45, and CTLA4; a second pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, dendritic cell, and CD45; a third pattern including antibodies against T cell, B cell, NK cell, monocyte, CD8, CD45, CD45RA, CD62L, CD197, CX3CR1 and TCR??; and a fourth pattern including antibodies against B cell, CD23, CD38, CD40, CD45 and IgM, wherein the antibodies of each pattern are labeled with fluorescent dyes. A method of identifying characterized immune cell subsets of a disease and a method of predicting the likelihood of NPC in a subject in the need thereof using the staining kit are also provided.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: FULLHOPE BIOMEDICAL CO., LTD.
    Inventors: Jan-Mou Lee, Li-Jen Liao, Yen-Ling Chiu, Chih-Hao Fang, Kai-Yuan Chou, Pei-Hsien Liu, Cheng-Yun Lee
  • Publication number: 20210202241
    Abstract: A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.
    Type: Application
    Filed: March 11, 2021
    Publication date: July 1, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen HO, You-Hua CHOU, Yen-Hao LIAO, Che-Lun CHANG, Zhen-Cheng WU
  • Patent number: 10950426
    Abstract: A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen Ho, You-Hua Chou, Yen-Hao Liao, Che-Lun Chang, Zhen-Cheng Wu
  • Publication number: 20200058495
    Abstract: A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.
    Type: Application
    Filed: August 14, 2018
    Publication date: February 20, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen HO, You-Hua CHOU, Yen-Hao LIAO, Che-Lun CHANG, Zhen-Cheng WU