Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.

Abstract: The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.

Abstract: A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.

Abstract: A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.

Abstract: The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.

Abstract: The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.

Abstract: A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved.

Abstract: A shift register array includes a plurality of first shift registers, a second shift register, a first connection line, a second connection line, and a third connection line. A signal output terminal of each first shift register overlaps the first connection line and the third connection line without electric connection. The first connection line is connected to a signal input terminal of the second shift register. The second connection line is connected to a signal output terminal of the second shift register, and establishes a plurality of electric connection paths. When one of the first shift registers malfunctions, the corresponding connection points and overlapping points are cut or connected so that the malfunctioned first shift register can be replaced by the second shift register.

Abstract: A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved.

Abstract: A shift register having individual driving nodes is disclosed. The shift register includes a first clock pull-down module, a second clock pull-down module, a key pull-down module, a self feedback module, and a driving output unit. The first clock pull-down module is used to pull-down the potential of a gate line to a low voltage when the first clock signal is in a high voltage level. The second clock signal pull-down module pulls down the potential of the gate line to the low voltage when the second clock signal is in a high voltage level. The key pull-down module rapidly pulls down the potential of the gate line to the low voltage level after the gate line outputs an output signal. The self feedback module is used to output a driving signal to the key pull-down module. The driving signal output unit outputs a next stage driving signal which is irrelative to the operation of the previous stage shift register.

Abstract: A shift register having individual driving nodes is disclosed. The shift register includes a first clock pull-down module, a second clock pull-down module, a key pull-down module, a self feedback module, and a driving output unit. The first clock pull-down module is used to pull-down the potential of a gate line to a low voltage when the first clock signal is in a high voltage level. The second clock signal pull-down module pulls down the potential of the gate line to the low voltage when the second clock signal is in a high voltage level. The key pull-down module rapidly pulls down the potential of the gate line to the low voltage level after the gate line outputs an output signal. The self feedback module is used to output a driving signal to the key pull-down module. The driving signal output unit outputs a next stage driving signal which is irrelative to the operation of the previous stage shift register.

Abstract: A control circuit equipped with electrostatic discharge (ESD) protection includes a plurality of shift registers, a plurality of buses coupled to the plurality of shift registers, a common line, a set of ESD protection components coupled to a set of the plurality of the buses for protecting the plurality of buses from ESD events; and a set of current paths coupled between the set of the ESD protection components and the common line for providing the ESD current paths to pass through.

Abstract: A shift register array includes a plurality of first shift registers, a second shift register, a first connection line, a second connection line, and a third connection line. A signal output terminal of each first shift register overlaps the first connection line and the third connection line without electric connection. The first connection line is connected to a signal input terminal of the second shift register. The second connection line is connected to a signal output terminal of the second shift register, and establishes a plurality of electric connection paths. When one of the first shift registers malfunctions, the corresponding connection points and overlapping points are cut or connected so that the malfunctioned first shift register can be replaced by the second shift register.