Patents by Inventor Yen-Hsun Lin
Yen-Hsun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11957722Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.Type: GrantFiled: March 7, 2022Date of Patent: April 16, 2024Assignee: GLAC BIOTECH CO., LTDInventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Wen-Yang Lin, Jia-Hung Lin, Yen-Yu Huang, Chi-Huei Lin, Shin-Yu Tsai
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Patent number: 11911421Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).Type: GrantFiled: November 18, 2021Date of Patent: February 27, 2024Assignee: GLAC BIOTECH CO., LTD.Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Yi-Wei Kuo, Yen-Yu Huang, Jia-Hung Lin
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Patent number: 11662515Abstract: A light guiding device is applied to an indication apparatus with a lighting function. The light guiding device includes a light guiding component and a piercing hole structure. The light guiding component has an incident surface and an emergent surface. The piercing hole structure is disposed between the incident surface and the emergent surface. An inner wall of the piercing hole structure includes at least one arc surface portion and at least one plane surface portion. Alight beam from the incident surface can be turned to a first angle via the arc surface portion, and the light beam can be turned to a second angle via the plane surface portion, so as to evenly project the light beam onto the emergent surface. A dimension of the emergent surface is greater than a dimension of the incident surface, and the first angle is greater than the second angle.Type: GrantFiled: January 9, 2019Date of Patent: May 30, 2023Assignee: Wistron CorporationInventors: Qi-Hong Yang, Yen-Hsun Lin
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Patent number: 11615955Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.Type: GrantFiled: August 24, 2020Date of Patent: March 28, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Bo-Yu Yang, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen Wan, Chao Kai Cheng, Kuan Chieh Lu
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Patent number: 11201055Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.Type: GrantFiled: September 15, 2017Date of Patent: December 14, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Chien-Hua Fu, Keng-Yung Lin, Yen-Hsun Lin, Kuanhsiung Chen, Juei-Nai Kwo, Minghwei Hong
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Patent number: 11114301Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, and source/drain regions. The gate structure comprises an yttrium oxide layer over the semiconductor substrate, an aluminum oxide layer over the yttrium oxide layer, and a gate electrode on the aluminum oxide layer. The source/drain regions are on the semiconductor substrate and on opposite sides of the gate structure.Type: GrantFiled: August 3, 2020Date of Patent: September 7, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ming-Hwei Hong, Juei-Nai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Bo-Yu Yang, Hsien-Wen Wan
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Patent number: 11081339Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.Type: GrantFiled: April 24, 2019Date of Patent: August 3, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
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Publication number: 20200388490Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.Type: ApplicationFiled: August 24, 2020Publication date: December 10, 2020Inventors: Bo-Yu YANG, Minghwei HONG, Jueinai KWO, Yen-Hsun LIN, Keng-Yung LIN, Hsien-Wen WAN, Chao Kai CHENG, Kuan Chieh LU
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Publication number: 20200365407Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, and source/drain regions. The gate structure comprises an yttrium oxide layer over the semiconductor substrate, an aluminum oxide layer over the yttrium oxide layer, and a gate electrode on the aluminum oxide layer. The source/drain regions are on the semiconductor substrate and on opposite sides of the gate structure.Type: ApplicationFiled: August 3, 2020Publication date: November 19, 2020Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ming-Hwei HONG, Juei-Nai KWO, Yen-Hsun LIN, Keng-Yung LIN, Bo-Yu YANG, Hsien-Wen WAN
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Patent number: 10755924Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.Type: GrantFiled: April 14, 2017Date of Patent: August 25, 2020Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Bo-Yu Yang, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen Wan, Chao Kai Cheng, Kuan Chieh Lu
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Patent number: 10748774Abstract: A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.Type: GrantFiled: November 14, 2018Date of Patent: August 18, 2020Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ming-Hwei Hong, Juei-Nai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Bo-Yu Yang, Hsien-Wen Wan
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Publication number: 20200103579Abstract: A light guiding device is applied to an indication apparatus with a lighting function. The light guiding device includes a light guiding component and a piercing hole structure. The light guiding component has an incident surface and an emergent surface. The piercing hole structure is disposed between the incident surface and the emergent surface. An inner wall of the piercing hole structure includes at least one arc surface portion and at least one plane surface portion. Alight beam from the incident surface can be turned to a first angle via the arc surface portion, and the light beam can be turned to a second angle via the plane surface portion, so as to evenly project the light beam onto the emergent surface. A dimension of the emergent surface is greater than a dimension of the incident surface, and the first angle is greater than the second angle.Type: ApplicationFiled: January 9, 2019Publication date: April 2, 2020Inventors: Qi-Hong Yang, Yen-Hsun Lin
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Publication number: 20190252184Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.Type: ApplicationFiled: April 24, 2019Publication date: August 15, 2019Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
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Publication number: 20190164767Abstract: A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.Type: ApplicationFiled: November 14, 2018Publication date: May 30, 2019Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ming-Hwei HONG, Juei-Nai KWO, Yen-Hsun LIN, Keng-Yung LIN, Bo-Yu YANG, Hsien-Wen WAN
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Patent number: 10283349Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.Type: GrantFiled: May 27, 2016Date of Patent: May 7, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
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Publication number: 20180151356Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.Type: ApplicationFiled: September 15, 2017Publication date: May 31, 2018Inventors: Chien-Hua FU, Keng-Yung LIN, Yen-Hsun LIN, Kuanhsiung CHEN, Juei-Nai KWO, Minghwei HONG
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Publication number: 20170352539Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.Type: ApplicationFiled: April 14, 2017Publication date: December 7, 2017Inventors: Bo-Yu YANG, Minghwei HONG, Jueinai KWO, Yen-Hsun LIN, Keng-Yung LIN, Hsien-Wen WAN, Chao Kai CHENG, Kuan Chieh LU
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Publication number: 20170345646Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.Type: ApplicationFiled: May 27, 2016Publication date: November 30, 2017Inventors: Kuanhsiung Chen, Mingwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin