Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.

Abstract: A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material.