Patents by Inventor Yen-Hua Kuo

Yen-Hua Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11953839
    Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.
    Type: Grant
    Filed: December 5, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yu Tu, Shao-Hua Wang, Yen-Hao Liu, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 8866311
    Abstract: The substrate includes a first dielectric layer, a first circuit pattern, a plurality of pillars and a second circuit pattern. The first dielectric layer has opposing first and second dielectric surfaces. The first circuit pattern is embedded in the first dielectric layer and defines a plurality of curved trace surfaces. Each of the pillars has an exterior surface adapted for making external electrical connection and a curved base surface abutting a corresponding one of the trace surfaces. The second circuit pattern is on the second dielectric surface of the first dielectric layer and electrically connected to the first circuit pattern.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: October 21, 2014
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Tien-Szu Chen, Kuang-Hsiung Chen, Sheng-Ming Wang, Hsiang-Ming Feng, Yen-Hua Kuo
  • Patent number: 8686568
    Abstract: The package substrate includes a core, a plurality of first circuit segments, and a plurality of conductive pillars. Each of the first circuit segments has a patterned metal layer disposed on the core, a barrier layer disposed on the patterned metal layer, and an upper metal pattern disposed on the barrier layer. The conductive pillars penetrate the core, the patterned metal layer, and the barrier layer, and contact the upper metal pattern. The conductive pillars are formed from a material that can be selectively removed without affecting the barrier layer.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: April 1, 2014
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming Wang, Hsiang-Ming Feng, Yen-Hua Kuo
  • Publication number: 20140084475
    Abstract: The substrate includes a first dielectric layer, a first circuit pattern, a plurality of pillars and a second circuit pattern. The first dielectric layer has opposing first and second dielectric surfaces. The first circuit pattern is embedded in the first dielectric layer and defines a plurality of curved trace surfaces. Each of the pillars has an exterior surface adapted for making external electrical connection and a curved base surface abutting a corresponding one of the trace surfaces. The second circuit pattern is on the second dielectric surface of the first dielectric layer and electrically connected to the first circuit pattern.
    Type: Application
    Filed: September 21, 2012
    Publication date: March 27, 2014
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Tien-Szu Chen, Kuang-Hsiung Chen, Sheng-Ming Wang, Hsiang-Ming Feng, Yen-Hua Kuo
  • Publication number: 20140084480
    Abstract: The package substrate includes a core, a plurality of first circuit segments, and a plurality of conductive pillars. Each of the first circuit segments has a patterned metal layer disposed on the core, a barrier layer disposed on the patterned metal layer, and an upper metal pattern disposed on the barrier layer. The conductive pillars penetrate the core, the patterned metal layer, and the barrier layer, and contact the upper metal pattern. The conductive pillars are formed from a material that can be selectively removed without affecting the barrier layer.
    Type: Application
    Filed: September 27, 2012
    Publication date: March 27, 2014
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming Wang, Hsiang-Ming Feng, Yen-Hua Kuo