Abstract: A memory device includes a plurality of memory cells disposed over a substrate and formed as an array that has a plurality of rows and a plurality of columns. Each of the plurality of memory cells includes a plurality of transistors. A first subset of the plurality of memory cells, that are disposed in first neighboring ones of the plurality of rows, are physically coupled to a corresponding one of a plurality of second interconnect structures that carries a supply voltage through a corresponding one of a plurality of first interconnect structures. The plurality of first interconnect structures extend along a first lateral direction in parallel with a lengthwise direction of a channel of each of the transistors of the memory cells, and the plurality of second interconnect structures, disposed above the plurality of first interconnect structures, extend along a second lateral direction perpendicular to the first lateral direction.

Abstract: A device includes a first power rail for a first power domain and a second power rail for a second power domain. A first circuit block is connected to the first power rail and a second circuit block is connected to the second power rail. The first and second circuit blocks are both connected to a virtual VSS terminal. A footer circuit is connected between the virtual VSS terminal and a ground terminal, and the footer circuit is configured to selectively control a connection between the virtual VSS terminal and the ground terminal.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A method of making a ROM structure includes the operations of forming an active area having a channel, a source region, and a drain region; depositing a gate electrode over the channel; depositing a conductive line over at least one of the source region and the drain region; adding dopants to the source region and the drain region of the active area; forming contacts to the gate electrode, the source region, and the drain; depositing a power rail, a bit line, and at least one word line of the integrated circuit against the contacts; and dividing the active area with a trench isolation structure to electrically isolate the gate electrode from the source region and the drain region.

Abstract: A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

Abstract: Disclosed herein are related to a memory device. In one aspect, a memory device includes a set of memory cells. In one aspect, the memory device includes a first bit line extending along a direction. The first bit line may be coupled to a subset of the set of memory cells disposed along the direction. In one aspect, the memory device includes a second bit line extending along the direction. In one aspect, the memory device includes a switch coupled between the first bit line and the second bit line.

Abstract: A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.

Abstract: Disclosed herein are multivalent nanoparticle vaccine compositions suitable for use in influenza vaccines. The nanoparticles include effective amounts of influenza glycoproteins that provide increased immune responses compared to a commercially available influenza vaccine composition. The present disclosure also provides vaccine formulation strategies that are cost effective and are convenient for clinical use. Methods of administering the nanoparticle vaccine compositions to a subject are also disclosed.

Abstract: Disclosed herein are multivalent nanoparticle vaccine compositions suitable for use in influenza vaccines. The nanoparticles include effective amounts of influenza glycoproteins that provide increased immune responses compared to a commercially available influenza vaccine composition. The present disclosure also provides vaccine formulation strategies that are cost effective and are convenient for clinical use. Methods of administering the nanoparticle vaccine compositions to a subject are also disclosed.

Abstract: Disclosed herein are multivalent nanoparticle vaccine compositions suitable for use in influenza vaccines. The nanoparticles include effective amounts of influenza glycoproteins that provide increased immune responses compared to a commercially available influenza vaccine composition. The present disclosure also provides vaccine formulation strategies that are cost effective and are convenient for clinical use. Methods of administering the nanoparticle vaccine compositions to a subject are also disclosed.

Abstract: Disclosed herein are multivalent nanoparticle vaccine compositions suitable for use in influenza vaccines. The nanoparticles include effective amounts of influenza glycoproteins that provide increased immune responses compared to a commercially available influenza vaccine composition. The present disclosure also provides vaccine formulation strategies that are cost effective and are convenient for clinical use. Methods of administering the nanoparticle vaccine compositions to a subject are also disclosed.

Abstract: A stable liquid pharmaceutical composition comprising an albumin-human growth hormone (hGH) fusion protein whose amino acid sequence is set forth as SEQ ID NO: 1 and a buffer, wherein the stable liquid pharmaceutical composition has a pH range of 5.5-6.5.

Abstract: An opening/closing structure for a tea-leaf filtering box of tea-brewing device is disclosed. The opening/closing a filtering box includes a body and a lid provided with a plurality of pores, the body including a frame body at the edge thereof, a bottom edge frame body and a plurality of supporting wire, characterized in that a bottom board is provided to the bottom frame body, and the center of the board and the center of the lid are respectively provided with a female threaded rod and a screw rod corresponding to each other, the screw rod passes through the top surface end of the lid and is pivotally connected to a lifting rod, thereby the rotating of the lifting will cause the screw rod to connect with the female threaded rod or to unscrew to dislocate with the lid so as to either lifting up the container or to lower the container to brew tea. The repeating process of lifting up and lowering down the tea leaf-filtering box can expedite the brewing of tea.