Abstract: A 3-dimension facet light-emitting source device including a transparent container, an anode plate, a cathode plate, a plurality of transparent plates and a low-pressure gas layer is provided. The transparent container has a sealed space. The transparent plates are disposed between the anode plate and the cathode plate, and have a fluorescent layer thereon respectively. The lower pressure gas layer is filled in the sealed space to induce electrons emitting from the cathode plate, and the electrons fly in a direction parallel to the transparent plates and hit each fluorescent layer to emit light, so as to form a set of 3-dimension facet patterns.

Abstract: An electron emission device including a first substrate, a second substrate, a gas, a sealant, and a phosphor layer is provided. The first substrate has a cathode thereon, and the cathode has a patterned profile. The second substrate is opposite to the first substrate and has an anode thereon. The sealant is disposed at edges of the first substrate and the second substrate to assemble the first and second substrates. The gas is disposed between the cathode and the anode and configured to induce a plurality of electrons from the cathode, wherein the pressure of the gas is between 10 torr and 10?3 torr. The phosphor layer is disposed on the moving path of the electrons to react with the electrons so as to emit light.

Abstract: The invention provides a method for modifying a surface of aluminum oxide. Aluminum oxide is contacted with a hydrogen peroxide aqueous solution having 5-70 volume % of hydrogen peroxide for 20 minutes to 3 hours. The invention also provides an electroosmosis pump and electric power generator having a porous aluminum oxide membrane modified by the above method.

Abstract: A plane light source is provided. The plane light source includes an anode layer, a cathode layer, a discharging gas, and at least one fluorescent layer. The discharging gas is between the anode layer and the cathode layer. The fluorescent layer is disposed on the anode layer and located between the anode layer and the cathode layer. In the plane light source, electrons is activated by discharge of the discharging gas and emitted from the cathode layer. The fluorescent layer is adapted for emitting a light when being bombarded by the electrons.

Abstract: An electron emission device including a first substrate, a second substrate, a gas, a sealant, and a phosphor layer is provided. The first substrate has a cathode thereon, and the cathode has a patterned profile. The second substrate is opposite to the first substrate and has an anode thereon. The sealant is disposed at edges of the first substrate and the second substrate to assemble the first and second substrates. The gas is disposed between the cathode and the anode and configured to induce a plurality of electrons from the cathode, wherein the pressure of the gas is between 10 torr and 10?3 torr. The phosphor layer is disposed on the moving path of the electrons to react with the electrons so as to emit light.

Abstract: A dual-purpose light-penetrating and light-emitting device is provided. The dual-purpose light-penetrating and light-emitting device includes a first transparent substrate, a spacing sidewall, a second transparent substrate, and a light-penetrative illuminating structure. The spacing sidewall is disposed between the first transparent substrate and the second transparent substrate for configuring a hermetic space. The light-penetrative illuminating structure includes a cathode structure, an anode structure, a low pressure gas layer, and a patterned fluorescent layer. The low pressure gas layer is accommodated in the hermetic space. The cathode structure and the anode structure are oppositely disposed on the first transparent substrate and the second transparent substrate, respectively. The patterned fluorescent layer is positioned between the cathode structure and the anode structure, for allowing an ambient natural light penetrating therethrough.

Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on the semiconductor film, wherein the first metal electrode forms an Ohmic contact with the semiconductor film; and c) forming a second metal electrode on the semiconductor film, the second metal electrode being isolated from the first metal electrode, wherein the second metal electrode forms a Schottky contact with the semiconductor film, wherein a thickness of the second metal electrode and a material of which the second metal electrode is made enable a Schottky barrier height of the Schottky contact to decrease when hydrogen contacts the second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.

Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on said semiconductor film, wherein said first metal electrode forms an Ohmic contact with said semiconductor film; and c) forming a second metal electrode on said semiconductor film, said second metal electrode being isolated from said first metal electrode, wherein said second metal electrode forms a Schottky contact with said semiconductor film, wherein a thickness of said second metal electrode and a material of which said second metal electrode is made enable a Schottky barrier height of said Schottky contact to decrease when hydrogen contacts said second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.

Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on said semiconductor film, wherein said first metal electrode forms an Ohmic contact with said semiconductor film; and c) forming a second metal electrode on said semiconductor film, said second metal electrode being isolated from said first metal electrode, wherein said second metal electrode forms a Schottky contact with said semiconductor film, wherein a thickness of said second metal electrode and a material of which said second metal electrode is made enable a Schottky barrier height of said Schottky contact to decrease when hydrogen contacts said second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.