Abstract: A nail product curing system for curing nail products includes a housing having a nail treatment space configured to receive a hand of a user and to position one or more nails of the user, and one or more LED light sources on the housing for generating light in the nail treatment space for performing a curing process. The nail product curing system also includes a sensing and controlling system that includes touchless sensors on the housing configured to sense placement of the hand in the nail treatment space, and to control various parameters of the curing process using movement of the user's hands. The sensing and controlling system also includes a circuit board on the housing and a radio transmission controller in signal communication with the circuit board configured to control the LED light sources and the curing process using programmed instructions.

Abstract: A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.

Abstract: A method performed by a User Equipment (UE) for a Simultaneous Transmission with Multi-Panel (STxMP) operation is provided. The method receives a configuration for multi-DCI based STxMP Physical Uplink Shared Channel (PUSCH). The method receives a Sounding Reference Signal (SRS) resource set configuration including a first SRS resource set and a second SRS resource set. The method receives first DCI in a first Control Resource Set (CORESET) and second DCI in a second CORESET. The method determines a size of a first field in the first DCI and a size of a second field in the second DCI based on the number of first SRS resources in the first SRS resource set and the number of second SRS resources in the second SRS resource set, respectively. The method transmits a first PUSCH and a second PUSCH scheduled by the first DCI and the second DCI, respectively.

Abstract: Methods and apparatuses for Uplink (UL) transmission enhancement are provided. The method includes receiving, from a Base Station (BS), a Radio Resource Control (RRC) message including a Physical Uplink Shared Channel (PUSCH) configuration; receiving, from the BS, a Downlink Control Information (DCI) format including at least one of: a first field that indicates an 8-port Sounding Reference Signal (SRS) resource, a second field that includes an index associated with a precoding matrix transmission, a third field that indicates a first set of parameters for transmitting a first codeword, and a fourth field that indicates a second set of parameters for transmitting a second codeword; determining a precoding matrix based on the DCI format and the PUSCH configuration; and performing a codebook-based PUSCH transmission using the precoding matrix.

Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a first fin and around first channel regions that are disposed over the first fin; forming an interlayer dielectric (ILD) layer over the first fin around the dummy gate structure; replacing the dummy gate structure with a gate structure; forming a first dielectric plug and a second dielectric plug in the gate structure on opposing sides of the first fin, where the first and second dielectric plugs cut the gate structure into a plurality of segments separated from each other; removing a segment of the gate structure interposed between the first dielectric plug and the second dielectric plugs to expose the first channel regions; removing the exposed first channel regions, where after removing the exposed first channel regions, a recess is formed in the ILD layer; and filling the recess with a dielectric material.

Abstract: A power supply circuit and a power distribution method thereof are provided. The power supply circuit includes a power input switch block, a power supply measurement block, a power supply conversion block and a power supply control block. The power input switch block provides a first power supply voltage to a load circuit based on an external power supply voltage from an adapter. The power supply measurement block measures a current of the first power supply voltage. The power supply conversion block is coupled to the battery module to provide a second power supply voltage to the load circuit. When a battery temperature of the battery module is higher than a critical temperature and a battery power of the battery module is higher than or equal to a critical power, the power supply control block limits the second power supply voltage provided to the load circuit.

Abstract: An antenna structure includes a radiative antenna element disposed in a first conductive layer and a reference ground plane, disposed in a second conductive layer under the first conductive layer. The radiative antenna element is loaded with a plurality of slots and is electrically connected to the reference ground plane through a plurality of vias, and the vias are placed along a first line of the radiative antenna element and the slots are placed along a second line perpendicular to the first line.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Abstract: An optical sensing apparatus includes a first photo-detecting layer having a first absorption region configured to absorb light in at least a visible spectrum; a second photo-detecting layer formed over the first photo-detecting layer, the second photo-detecting layer having a second absorption region configured to absorb light in at least a mid-infrared spectrum; a first buffer layer formed over the second photo-detecting layer; and a second buffer layer formed over the first photo-detecting layer and under the second photo-detecting layer.

Abstract: An antenna structure is provided. The antenna structure includes a first metal layer and a second metal layer disposed over the first metal layer. The second metal layer forms a first antenna resonating element operating at a first band and has a first opening. The antenna structure also includes a third metal layer disposed over the second metal layer. The third metal layer forms a second antenna resonating element operating at a second band, which is different from the first band. The antenna structure further includes a first transmission line extending from the first metal layer to the second metal layer and a second transmission line extending from the first metal layer through the first opening to the third metal layer.

Abstract: An antenna module is provided. The antenna module includes a dielectric substrate, a radio frequency integrated circuit (RFIC) and a first number of first antennas. The radio frequency integrated circuit (RFIC) is disposed on the dielectric substrate, wherein the RFIC comprises a single first antenna port group and second antenna port groups to receive or transmit signals. The first number of first antennas is arranged in a first row on the dielectric substrate, wherein at least two of the first antennas are connected to the first antenna port group of the RFIC.

Abstract: An antenna device with a tunable gain, includes a ground plane and a plurality of resonating units. A first resonating unit of the resonating units includes the following elements. A radiating plate, is arranged above the ground plane, and substantially parallel with the ground plane. A ground wall, is arranged between the radiating plate and the ground plane, and substantially perpendicular to the ground plane. A first connecting element, extends along a predefined direction substantially perpendicular to the ground plane. The first connecting element is adapted to couple the radiating plate to the ground plane.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.

Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.

Abstract: A method for screening host cells expressing a target protein is provided. The method includes the following steps: providing an expression vector, the expression vector including a promoter, a gene encoding a target protein and an FTH1 gene; transfecting the host cells with the expression vector; culturing the host cells in a medium; and adding iron ions to the medium, and screening the surviving host cells to obtain the host cells expressing the target protein. An expression vector and a method for establishing a cell line stably expressing an exogenous recombinant gene are also provided.

Abstract: Many embodiments provide a high frequency near-field probe based on a tapered waveguide combined with at least one optically-pumped high frequency radiation source and at least one optically-probed high frequency radiation detector.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.