Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.

Abstract: A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes a dielectric layer, an interconnect structure disposed in the dielectric layer, and an etch stop layer which is disposed on a lower end surface of the interconnect structure and which includes silicon carbonitride represented by a general formula of SixCyNz, wherein x is a silicon content ranging from 30 atomic % to 60 atomic %, y is a carbon content ranging from 25 atomic % to 60 atomic %, z is a nitrogen content ranging from 10 atomic % to 20 atomic %, and a sum of x, y, and z is 100 atomic %.

Abstract: Terahertz-gigahertz illuminator that may be implemented in or attached to many gigahertz/terahertz applications or systems (such as imaging, security or communication system) is proposed. One or more THz emitters are combined to form an array, where each emitter is comprised of a THz source and a THz lens. Furthermore, for each THz emitter, the geometric relation between the THz source and the THz lens may be dynamically modified to dynamically modify both the emission angle and the pointing angle of the launched THz wave. In addition, each THz emitter may be rotated and/or translated to change the propagation direction of the launched THz wave. Therefore, the THz illuminator may uniformly illuminate the object of interest at any distance without modifying other aspects of the THz source to effectively use the limited source power provided by the individual THz emitters.

Abstract: Terahertz-gigahertz fisheye lens systems that may be implemented in or attached to many gigahertz/terahertz systems (such as imaging or security system) are proposed. Each proposed terahertz-gigahertz fisheye lens system includes three lens elements in which combined provides a FOV of about 160°. Each lens element is made of quartz or materials having similar refractive indices. The surfaces of each lens element are either planar and/or spherical. Furthermore, the radius of curvature, diameter, surface profile, size, spacing, and material of the lens elements may be selected to achieve quality performance. Also, to change the focusing distance for achieving optimum imaging resolution, the spacing between these lens element and the image sensor (or the object) may be adjusted.

Abstract: Lens systems used in a gigahertz/terahertz imaging system are proposed. Each proposed lens system may include two thin lens elements, spherical or aspherical, in which combined provides gigahertz-terahertz refractive power with a small f-number. The gigahertz-terahertz waves are diverted by the lens systems in such a way that it forms an image of an object, such as a human scale object, on a planar gigahertz-terahertz image sensor. The radius of curvatures, profile, sizes, spacing, and aspherical coefficients of the lens elements may be selected to achieve quality focusing performance. The spacing between the lens elements and the spacing between the lens elements and the image sensor may be adjusted to change both the focal length and the focusing distance to achieve optimum field of view and maximum imaging resolution. The size of the lens may be scaled with the size of the object or the lens aperture stop.

Abstract: A THz system has a housing configured to minimize both external noise and internal stray THz waves. The housing material is selected according to the frequency range of THz waves to be propagated though the space enclosed by the housing. In general, the housing is made of foam material, such as low relative dielectric constant foam material, especially foam with conductive additives. The relative dielectric constant of foam material is usually approach to 1.0, which may minimize the reflection of THz waves propagating into the housing. The conductive additives may increase the absorption of the THz waves, even other electromagnetic waves, inside the housing. Clearly, by using proper material, such as Expanded Polypropylene (EPP) and/or Styrofoam, with proper conductive additives, such as graphite, carbon, sliver, absorptive particles/dyes, the housing may minimize the interference of undesired stray terahertz-gigahertz waves, even other noise.

Abstract: The present invention provides an electromagnetic wave receiving/transmitting device and the application thereof. The electromagnetic wave receiving/transmitting device of the present invention can effectively receive up to 80 to 500 GHz of terahertz electromagnetic waves. The electromagnetic wave receiving/transmitting device of the present invention further achieves the application of terahertz imaging. The physical package of the electromagnetic wave receiving/transmitting device of the present invention is capable of effectively absorbing external and internal noise of electromagnetic waves to significantly reduce noise, and thereby achieving the application of terahertz imaging.

Abstract: An p-type organic/p-type inorganic electroluminescent device includes an anode, a p-type organic compound layer connected to the anode, a cathode, and a p-type inorganic compound layer connected to the cathode. The p-type organic compound layer and the p-type inorganic compound layer are in direct contact with one another to form an p-type organic/p-type inorganic hetero-junction therebetween, and thereby light generated at the p-type organic/p-type inorganic hetero-junction with electrons and holes recombination at the hetero-junction under applied forward voltage.