Patents by Inventor Yen-Kun Victor Wang
Yen-Kun Victor Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8895452Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.Type: GrantFiled: May 31, 2012Date of Patent: November 25, 2014Assignee: Lam Research CorporationInventors: Jerrel Kent Antolik, Yen-kun Victor Wang, John Holland
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Patent number: 8628675Abstract: Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.Type: GrantFiled: October 31, 2012Date of Patent: January 14, 2014Assignee: Lam Research CorporationInventors: Brian McMillin, Jose V. Tong, Yen-Kun Victor Wang
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Patent number: 8624210Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.Type: GrantFiled: June 21, 2013Date of Patent: January 7, 2014Assignee: Lam Research CorporationInventors: Yen-Kun Victor Wang, Shang-I Chou, Jason Autustino
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Publication number: 20130323860Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support aim is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.Type: ApplicationFiled: May 31, 2012Publication date: December 5, 2013Applicant: Lam Research CorporationInventors: Jerrel Kent Antolik, Yen-kun Victor Wang, John Holland
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Publication number: 20130288488Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.Type: ApplicationFiled: June 21, 2013Publication date: October 31, 2013Inventors: Yen-Kun Victor Wang, Shang-I Chou, Jason Augustino
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Patent number: 8492736Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.Type: GrantFiled: June 9, 2010Date of Patent: July 23, 2013Assignee: Lam Research CorporationInventors: Yen-Kun Victor Wang, Shang-I Chou, Jason Augustino
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Patent number: 8313612Abstract: Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.Type: GrantFiled: March 24, 2009Date of Patent: November 20, 2012Assignee: Lam Research CorporationInventors: Brian McMillin, Jose V. Tong, Yen-Kun Victor Wang
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Publication number: 20110306213Abstract: A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber.Type: ApplicationFiled: June 9, 2010Publication date: December 15, 2011Applicant: Lam Research CorporationInventors: Yen-Kun Victor Wang, Shang-I Chou, Jason Augustino
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Publication number: 20110120017Abstract: Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.Type: ApplicationFiled: November 18, 2010Publication date: May 26, 2011Applicant: Applied Materials, Inc.Inventors: Won B. Bang, Toan Q. Tran, Yen-Kun Victor Wang
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Patent number: 7841582Abstract: Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.Type: GrantFiled: November 16, 2004Date of Patent: November 30, 2010Assignee: Applied Materials, Inc.Inventors: Won B. Bang, Toan Q. Tran, Yen-Kun Victor Wang
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Publication number: 20100248490Abstract: Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.Type: ApplicationFiled: March 24, 2009Publication date: September 30, 2010Applicant: Lam Research CorporationInventors: Brian McMillin, Jose V. Tong, Yen-Kun Victor Wang
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Patent number: 7754282Abstract: A method of adjusting a spacing between a gas distribution member and a substrate support includes forming a layer on a substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations.Type: GrantFiled: July 30, 2008Date of Patent: July 13, 2010Assignee: Applied Materials, Inc.Inventors: Kirby Floyd, Adrian Q. Montgomery, Jennifer Gonzales, Won Bang, Rong Pan, Amna Mohammed, Yen-Kun Victor Wang
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Patent number: 7722719Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.Type: GrantFiled: March 7, 2005Date of Patent: May 25, 2010Assignee: Applied Materials, Inc.Inventors: Lawrence Chung-Lai Lei, Siqing Lu, Steven E. Gianoulakis, Won B. Bang, David P. Sun, Yen-Kun Victor Wang
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Publication number: 20090197356Abstract: We have discovered a method of using the vacuum chuck/heater upon which a substrate wafer is positioned to determine whether the wafer is properly placed on the vacuum chuck. The method employs measurement of a rate of increase in pressure in a confined space beneath the substrate. Because the substrate is not hermetically sealed to the upper surface of the vacuum chuck/heater apparatus, pressure from the processing chamber above the substrate surface tends to leak around the edges of the substrate and into the space beneath the substrate which is at a lower pressure. A pressure sensing device, such as a pressure transducer is in communication with a confined volume present beneath the substrate. The rate of pressure increase in the confined volume is measured. If the substrate is well positioned on the vacuum chuck/heater apparatus, the rate of pressure increase in the confined volume beneath the substrate is slow.Type: ApplicationFiled: March 27, 2009Publication date: August 6, 2009Inventors: Won B. Bang, Yen-Kun Victor Wang
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Publication number: 20090113684Abstract: Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.Type: ApplicationFiled: October 17, 2008Publication date: May 7, 2009Applicant: Applied Materials, Inc.Inventors: Won B. Bang, Yen-Kun Victor Wang, Lawrence Chung-Lai Lei
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Publication number: 20060196603Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.Type: ApplicationFiled: March 7, 2005Publication date: September 7, 2006Applicant: Applied Materials, Inc.Inventors: Lawrence Lei, Siqing Lu, Steven Gianoulakis, Won Bang, David Sun, Yen-Kun Victor Wang
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Publication number: 20040089420Abstract: Accumulation of material in an endpoint detection cell downstream of a CVD chamber is avoided by selectively isolating the endpoint detection cell from chamber exhaust. During initial and midpoint phases of a plasma-based semiconductor fabrication process when concentration of materials in the chamber exhaust is heaviest, a bypass valve is closed and the endpoint detection cell is isolated from exposure to exhaust from the chamber. As endpoint of the plasma-based process approaches, the isolation valve is opened and the detection cell is exposed to chamber exhaust and can accurately detect the precise endpoint of the process. By selectively isolating the endpoint detector in accordance with embodiments of the present invention, unwanted accumulation of deposited materials that could degrade reliability of an optical or RF power endpoint detection signal is avoided.Type: ApplicationFiled: October 30, 2003Publication date: May 13, 2004Applicant: Applied Materials, Inc.Inventors: Wendy Ng, Toan Tran, Yen-Kun Victor Wang
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Publication number: 20030027428Abstract: Accumulation of material in an endpoint detection cell downstream of a CVD chamber is avoided by selectively isolating the endpoint detection cell from chamber exhaust. During initial and midpoint phases of a plasma-based semiconductor fabrication process when concentration of materials in the chamber exhaust is heaviest, a bypass valve is closed and the endpoint detection cell is isolated from exposure to exhaust from the chamber. As endpoint of the plasma-based process approaches, the isolation valve is opened and the detection cell is exposed to chamber exhaust and can accurately detect the precise endpoint of the process. By selectively isolating the endpoint detector in accordance with embodiments of the present invention, unwanted accumulation of deposited materials that could degrade reliability of an optical or RF power endpoint detection signal is avoided.Type: ApplicationFiled: July 18, 2001Publication date: February 6, 2003Applicant: Applied Materials, Inc.Inventors: Wendy Ng, Toan Tran, Yen-Kun Victor Wang
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Patent number: 6506994Abstract: A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers.Type: GrantFiled: June 15, 2001Date of Patent: January 14, 2003Assignee: Applied Materials, Inc.Inventors: Yen-Kun Victor Wang, Mark Fodor, Chen-An Chen, Himanshu Pokharna, Son T. Nguyen, Kelly Fong, Inna Shmurun
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Patent number: RE47275Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.Type: GrantFiled: October 15, 2015Date of Patent: March 5, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Jerrell Kent Antolik, Yen-kun Victor Wang, John Holland