Patents by Inventor Yen L. Lim

Yen L. Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices with asymmetric halo implantation and method of manufacture
    Patent number: 10008597
    Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: June 26, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Darshana N. Bhagat, Thomas J. Dunbar, Yen L. Lim, Jed H. Rankin, Eva S. Holmes
  • SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE
    Publication number: 20150054094
    Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.
    Type: Application
    Filed: October 3, 2014
    Publication date: February 26, 2015
    Inventors: Darshana N. BHAGAT, Thomas J. DUNBAR, Yen L. LIM, Jed H. RANKIN, Eva S. HOLMES
  • Biosensors integrated with a microfluidic structure
    Patent number: 8674474
    Abstract: A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: March 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Kristin M. Ackerson, John J. Ellis-Monaghan, Jeffrey P. Gambino, Yen L. Lim
  • BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE
    Publication number: 20140021516
    Abstract: A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
    Type: Application
    Filed: September 23, 2013
    Publication date: January 23, 2014
    Applicant: INTERNATONAL BUSINESS MACHINES CORPORATION
    Inventors: Kristin M. ACKERSON, John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Yen L. LIM
  • Biosensors integrated with a microfluidic structure
    Patent number: 8551859
    Abstract: A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: October 8, 2013
    Assignee: International Business Machines Corporation
    Inventors: Kristin M. Ackerson, John J. Ellis-Monaghan, Jeffrey P. Gambino, Yen L. Lim
  • BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE
    Publication number: 20130119440
    Abstract: A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.
    Type: Application
    Filed: November 10, 2011
    Publication date: May 16, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kristin M. ACKERSON, John J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Yen L. LIM
  • Self-dicing chips using through silicon vias
    Patent number: 8168474
    Abstract: Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: May 1, 2012
    Assignee: International Business Machines Corporation
    Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Robert K. Leidy, Yen L. Lim