Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: A semiconductor device includes a metal layer, a ground plane formed on the metal layer, a first inductor formed on the metal layer, and a first isolation region formed on the metal layer and arranged to separate the first inductor from the ground plane. The first isolation region includes a first main area surrounding the first inductor, and at least one first slot extended from the first main area.

Abstract: A headlight is disclosed, comprising a headlight body, a temperature sensor, an IR module, a low beam module, and a controller. The headlight body has a housing and a lampshade. The lampshade has a light-absorbing and heating layer. The temperature sensor is configured inside the headlight body, to detect the temperature of the lamp. The IR module is a wide-angle LED lamp, positioned inside the headlight body, and It directly irradiates toward the lampshade. The low beam module is configured inside the headlight body, emitting toward the lampshade, and an emitting direction of the low beam module crosses an irradiating direction of the IR module. The controller is electrically connected to the IR module and the temperature sensor, and turns on/off the IR module based on the temperature of the lamp.

Abstract: An injection-locked frequency divider (ILFD) including a signal injector, an oscillator (OSC), and a buffer stage is provided. The signal injector is configured for receiving an injection signal. The OSC is configured for dividing the frequency of the injection signal, so as to generate a first divided frequency signal, where there is an integral-multiple relation between the frequency of the first divided frequency signal and that of the injection signal. The buffer stage is configured for receiving and boosting the first divided frequency signal, and performing a push-push process on the first divided frequency signal, so as to output a second divided frequency signal, where there is a fractional-multiple relation between the frequency of the second divided frequency signal and that of the injection signal.

Abstract: An injection-locked frequency divider (ILFD) including a signal injector, an oscillator (OSC), and a buffer stage is provided. The signal injector is configured for receiving an injection signal. The OSC is configured for dividing the frequency of the injection signal, so as to generate a first divided frequency signal, where there is an integral-multiple relation between the frequency of the first divided frequency signal and that of the injection signal. The buffer stage is configured for receiving and boosting the first divided frequency signal, and performing a push-push process on the first divided frequency signal, so as to output a second divided frequency signal, where there is a fractional-multiple relation between the frequency of the second divided frequency signal and that of the injection signal.

Abstract: An injection-locked frequency divider is provided and which includes an injection transistor, an oscillator, a current source and a transformer. The injection transistor is used to receive an injection signal. The oscillator is used to divide the injection signal to generate a divided frequency signal. The current source is coupled to the oscillator to provide a current to the oscillator. The transformer is coupled between the injection transistor and the oscillator to increase the equivalent transconductance of the injection transistor, and thus increasing the locking range of the injection-locked frequency divider.

Abstract: An injection-locked frequency divider is provided and which includes an injection transistor, an oscillator, a current source and a transformer. The injection transistor is used to receive an injection signal. The oscillator is used to divide the injection signal to generate a divided frequency signal. The current source is coupled to the oscillator to provide a current to the oscillator. The transformer is coupled between the injection transistor and the oscillator to increase the equivalent transconductance of the injection transistor, and thus increasing the locking range of the injection-locked frequency divider.